METHOD OF WIRING MULTILAYER STRUCTURE TRANSISTOR

PURPOSE:To reduce the wiring capacitance of a crossing part, and increase the driving frequency of a shift register, by making the width of at least one wiring thinner at the crossing part where wirings of a multilayer structure transistor cross each other. CONSTITUTION:At a part where wirings of a...

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Bibliographic Details
Main Authors NABESHIMA REIKO, WATANABE HIROBUMI, ABE SHUYA, MORI KOJI
Format Patent
LanguageEnglish
Published 21.02.1989
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:PURPOSE:To reduce the wiring capacitance of a crossing part, and increase the driving frequency of a shift register, by making the width of at least one wiring thinner at the crossing part where wirings of a multilayer structure transistor cross each other. CONSTITUTION:At a part where wirings of a multilayer structure transistor cross each other, the width of at least one wiring 6' is made thinner than that of the other wiring 6 at the crossing part. As metal for the wiring, any materials which are usually used can be available. Thereby, the capacitance of the crossing part can be reduced, and the driving frequency of a shift register can be increased, even in the case of a transistor having many crossing parts.
Bibliography:Application Number: JP19870202815