PHOTOMASK

• Main Author: DAN MASAHIRO
• Format: Patent
• Language: English
• Published: 12.04.1988
• Subjects: APPARATUS SPECIALLY ADAPTED THEREFOR; BASIC ELECTRIC ELEMENTS; CINEMATOGRAPHY; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; ELECTROGRAPHY; HOLOGRAPHY; MATERIALS THEREFOR; ORIGINALS THEREFOR; PHOTOGRAPHY; PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES; PHYSICS; SEMICONDUCTOR DEVICES

PURPOSE:To perform the comprehensive exposure of multiple patterns by unmagnified exposure, by transferring a prescribed circuit pattern at every area divided into two or more on a wafer, and forming a target pattern corresponding to the target pattern of the wafer. CONSTITUTION:Positioning between the photomask 1 and the wafer 6 is performed by the target patterns 5a and 5b on the lowest row provided on the photomask 1, and the target patterns 7a and 7b on the upper stage of the wafer 6. Next, a prescribed beam of light is projected on a resist 1 covered on the surface of the wafer 6 through the photomask 1, and the shadow of the photomask 1 is transferred on the resist, then, a resist pattern having a prescribed shape is formed. Next, the positioning between the target patterns 4a and 4b on the uppermost stage of the photomask 1 and the target patterns 8a and 8b on the lower stage of the wafer 6, is performed, and the prescribed beam of light is projected, and then, the resist pattern is formed. Thus, since the prescribed resist pattern is formed through bi-sected exposure, it is possible to realize the unmagnified exposure of 1:1 without making the photomask into a large size.