MOS TRANSISTOR AND MANUFACTURE THEREOF

• Main Author: MOMOTOMI MASAKI
• Format: Patent
• Language: English
• Published: 03.06.1988
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

PURPOSE:To obtain a MOS transistor having high current supply capacity and high breakdown strength by forming a gate electrode to an inverted projecting shape and making the thickness of a gate insulating film at the side end section of a drain region in a gate region thicker than that of the centra...