MAGNETIC HEAD

PURPOSE:To obtain a working gap length having high accuracy by providing a working gap formed by ion implantation so as to have high magnetic resistance to magnetic head cores. CONSTITUTION:The magnetic head core 1 having high magnetic permeability is divided to two parts. The high magnetic resistan...

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Main Authors SAJI HARUO, OKITA KAZUHIKO, HORIKAWA JUNICHI, SUMITA KUNYU, HOSHI TOSHIHARU
Format Patent
LanguageEnglish
Published 22.01.1987
Subjects
INFORMATION STORAGE
INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORDCARRIER AND TRANSDUCER
PHYSICS
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Abstract PURPOSE:To obtain a working gap length having high accuracy by providing a working gap formed by ion implantation so as to have high magnetic resistance to magnetic head cores. CONSTITUTION:The magnetic head core 1 having high magnetic permeability is divided to two parts. The high magnetic resistance part 4a by ion implantation is formed to one divided piece 1a and the high magnetic resistance part 4a is grasped by the piece 1a and the other divided piece 1b. The working gap 4 is formed by such high magnetic resistance part 4a. For example, the high magnetic resistance part 4a having about 300Angstrom depth from the surface is formed by implanting zinc ions at 500keV thereto. Any ion implantation by which the magnetic structure of the crystal is broken down is satisfactory. The uneven wear of the working gap and the decrease of the magnetic head efficiency are thereby prevented and the working gap length having the high accuracy is obtd.
AbstractList PURPOSE:To obtain a working gap length having high accuracy by providing a working gap formed by ion implantation so as to have high magnetic resistance to magnetic head cores. CONSTITUTION:The magnetic head core 1 having high magnetic permeability is divided to two parts. The high magnetic resistance part 4a by ion implantation is formed to one divided piece 1a and the high magnetic resistance part 4a is grasped by the piece 1a and the other divided piece 1b. The working gap 4 is formed by such high magnetic resistance part 4a. For example, the high magnetic resistance part 4a having about 300Angstrom depth from the surface is formed by implanting zinc ions at 500keV thereto. Any ion implantation by which the magnetic structure of the crystal is broken down is satisfactory. The uneven wear of the working gap and the decrease of the magnetic head efficiency are thereby prevented and the working gap length having the high accuracy is obtd.
Author HOSHI TOSHIHARU
SUMITA KUNYU
OKITA KAZUHIKO
HORIKAWA JUNICHI
SAJI HARUO
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Snippet PURPOSE:To obtain a working gap length having high accuracy by providing a working gap formed by ion implantation so as to have high magnetic resistance to...
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INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORDCARRIER AND TRANSDUCER
PHYSICS
Title MAGNETIC HEAD
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