MOLECULAR BEAM CRYSTAL GROWTH APPARATUS

• Main Authors: MORI HIDEKI, AKAI SHINICHI, SUZUKI TAKASHI, OKADA HIROSHI
• Format: Patent
• Language: English
• Published: 20.05.1986
• Subjects: AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR; BASIC ELECTRIC ELEMENTS; CHEMISTRY; CRYSTAL GROWTH; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; METALLURGY; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE; REFINING BY ZONE-MELTING OF MATERIAL; SEMICONDUCTOR DEVICES; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE; SINGLE-CRYSTAL-GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL

PURPOSE:To enable the formation of a grown crystal film free from surface defect, by etching the surface of a compound semiconductor substrate in a molecular beam crystal growth apparatus, transferring the substrate in a vacuum path, and carrying out the molecular beam crystal growth in an ultra-high vacuum chamber. CONSTITUTION:The substrate attached to a substrate holder is introduced through the inlet port 19 into the substrate-introducing chamber 4, and the chamber is evacuated. The substrate is then transferred to the gas etching chamber 3, fixed to the manipulator 13, and etched with etchant gas 15 under rotation to obtain clean surface. The substrate is transferred to the specimen preparation chamber 2 without exposing to the atmosphere, evacuated further, transferred to a molecular beam crystal growth chamber, fixed to the manipulator 6, and subjected to the molecular beam emitted from the molecular beam cells 8, 8 in ultra-high vacuum to form a crystal on the surface of the substrate. After the epitaxial growth operation, the substrate is removed from the manipulator 6, returned successively through the specimen preparation chamber 2, the gas etching chamber 3 and the substrate-introducing chamber 4, and is taken out of the apparatus through the substrate inlet port 19.