METHOD OF PRODUCING SEMICONDUCTOR STRUCTURE

• Main Authors: RARII ARAN NESUBITSUTO, UEIN AABUINGU KINII, JIEROOMU BURETSUTO RASUKII
• Format: Patent
• Language: English
• Published: 16.11.1985
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; SEMICONDUCTOR DEVICES; TECHNICAL SUBJECTS COVERED BY FORMER USPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ARTCOLLECTIONS [XRACs] AND DIGESTS

A method is provided for manufacturing semiconductor structures having dielectrically isolated silicon regions on one side of a silicon body. This is accomplished by forming in the silicon body a set of buried regions and a set of surface regions having characteristics which make them anodically etc...