COMPOSITE TYPE MAGNETIC BUBBLE MEMORY ELEMENT

• Main Authors: TAKESHITA MASATOSHI, SUZUKI MAKOTO, TAKEUCHI TERUAKI, SUGITA KEN, KODAMA NAOKI
• Format: Patent
• Language: English
• Published: 14.04.1984
• Subjects: INFORMATION STORAGE; PHYSICS; STATIC STORES

PURPOSE:To obtain a magnetic bubble memory element which is operated with high density and exactly by preparing a minor loop group using jointly an ion implanting system and a permalloy system, and installing a connecting part to the ion implanting system from the permalloy system, more toward the ion implanting transfer line direction than a connecting part to the permalloy system from the ion implanting system. CONSTITUTION:A plan view in the vicinity of the connecting part of the minor loop group shows the connecting part 11 to the ion implanting system from the permalloy system is set more toward the ion implanting system transfer line side than the connecting part 10 to the permalloy system from the ion implanting system. The bubble transfer malfunction of the ion implanting system transfer line generated in the vicinity of the connecting parts of both systems does not occur at all. For instance, by using the magnetic bubble of a 1mum diameter, a minor loop transfer of a 4mum period is formed by the ion implanting system. High integration by four times can be obtained at a single stroke by using a function part used for the magnetic bubble of a 2mum diameter cirrently used.