MANUFACTURE OF SEMICONDUCTOR DEVICE

PURPOSE:To prevent deformation of an electrode substrate of semiconductor device to be generated at the cooling time by a method wherein directly after a semiconductor element is adhered to the electrode substrate, the electrode substrate is fixed by a radiating fin so as not to generate warp on the...

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Main Authors SAKAMOTO TATSUJI, SHIMAOKA MAKOTO
Format Patent
LanguageEnglish
Published 17.06.1982
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Abstract PURPOSE:To prevent deformation of an electrode substrate of semiconductor device to be generated at the cooling time by a method wherein directly after a semiconductor element is adhered to the electrode substrate, the electrode substrate is fixed by a radiating fin so as not to generate warp on the electrode substrate in the cooling process, and at the same time, the adhering part is cooled forcibly with cooling gas. CONSTITUTION:After plating of an Au-Si solder material 2 is performed on the electrode substrate 1, the semiconductor element 3 being sucked to the tip end of a collet 4 is put on the electrode substrate 1 to be heated, and at the same time, the semiconductor element 3 is pressed from the upper part, and is rubbed to perform Au-Si eutectic soldering. Then the collet is removed, and the radiating fin 5 consisting of a material of Ca, etc., having favorable thermal conductivity is made to come in contact with the upper face of the electrode substrate 1 to cool to supplement the removal of the collet, mand at the same time, reductive gas of N2 gas, etc., is made to blow-off from the upper part to perform cooling.
AbstractList PURPOSE:To prevent deformation of an electrode substrate of semiconductor device to be generated at the cooling time by a method wherein directly after a semiconductor element is adhered to the electrode substrate, the electrode substrate is fixed by a radiating fin so as not to generate warp on the electrode substrate in the cooling process, and at the same time, the adhering part is cooled forcibly with cooling gas. CONSTITUTION:After plating of an Au-Si solder material 2 is performed on the electrode substrate 1, the semiconductor element 3 being sucked to the tip end of a collet 4 is put on the electrode substrate 1 to be heated, and at the same time, the semiconductor element 3 is pressed from the upper part, and is rubbed to perform Au-Si eutectic soldering. Then the collet is removed, and the radiating fin 5 consisting of a material of Ca, etc., having favorable thermal conductivity is made to come in contact with the upper face of the electrode substrate 1 to cool to supplement the removal of the collet, mand at the same time, reductive gas of N2 gas, etc., is made to blow-off from the upper part to perform cooling.
Author SHIMAOKA MAKOTO
SAKAMOTO TATSUJI
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Snippet PURPOSE:To prevent deformation of an electrode substrate of semiconductor device to be generated at the cooling time by a method wherein directly after a...
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SubjectTerms BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
Title MANUFACTURE OF SEMICONDUCTOR DEVICE
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