MANUFACTURE OF SEMICONDUCTOR DEVICE

PURPOSE:To obtain a semiconductor device with enhanced dilelctric withstand voltage and being enabled to intergrated even a high voltage circuit by a method wherein the device is made to have silicon/magnesia spinel/silicon structure. CONSTITUTION:A concave part 12 is formed on a silicon substrate 1...

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Bibliographic Details
Main Authors ARIMOTO YOSHIHIRO, IHARA MASARU
Format Patent
LanguageEnglish
Published 18.05.1982
Subjects
BASIC ELECTRIC ELEMENTS
CINEMATOGRAPHY
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
ELECTROGRAPHY
ELECTROPHOTOGRAPHY
HOLOGRAPHY
MAGNETOGRAPHY
PHOTOGRAPHY
PHYSICS
SEMICONDUCTOR DEVICES
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Summary:PURPOSE:To obtain a semiconductor device with enhanced dilelctric withstand voltage and being enabled to intergrated even a high voltage circuit by a method wherein the device is made to have silicon/magnesia spinel/silicon structure. CONSTITUTION:A concave part 12 is formed on a silicon substrate 11, and a magnesia spinel (MgO.Al2O3) layer 13 is made to grow adhering on the substrate 11. Then a P<+> type silicon epitaxial layer 14 is made to grow on the upper face of the MgO.Al2O3 layer, and a P type silicon epitaxial layer 15 is made to grow the same on the upper face thereof. Moreover it is polished up to expose the P type silicon epitaxial layer, and the region in the convex region necessitating to be isolated is oxidized to form silicon dioxide layers 18.
Bibliography:Application Number: JP19800154576