FORMATION OF CARBONACEOUS HIGHLY FUNCTIONAL MATERIAL THIN FILM BY ELECTRON BEAM-EXCITED PLASMA CVD
PROBLEM TO BE SOLVED: To provide a method for forming a thin film of a high-hardness, carbonaceous highly functional material, especially the thin film excellent in adhesion to a substrate, utilizing electron beam-excited CVD with a device using a simpler process and enhanced in productivity. SOLUTI...
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Main Authors | , , , |
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Format | Patent |
Language | English |
Published |
06.10.1998
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Edition | 6 |
Subjects | |
Online Access | Get full text |
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Abstract | PROBLEM TO BE SOLVED: To provide a method for forming a thin film of a high-hardness, carbonaceous highly functional material, especially the thin film excellent in adhesion to a substrate, utilizing electron beam-excited CVD with a device using a simpler process and enhanced in productivity. SOLUTION: In the electron beam-excited CVD, a carbon-contg. raw gas is introduced into a vacuum vessel contg. a substrate and irradiated with an electron beam to produce plasma of the raw gas. A negative voltage at 100 to 200 V is impressed on the substrate to form a high-hardhess carbonaceoeous thin film on the substrate. The electron accelerating voltage is preferably controlled to >=50 V in an electron-beam gun. Further, the negative bias voltage to be impressed on the substrate is controlled to >=200 V in the preceding stage and to 100-200 V in the succeeding stage to improve the adhesion. |
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AbstractList | PROBLEM TO BE SOLVED: To provide a method for forming a thin film of a high-hardness, carbonaceous highly functional material, especially the thin film excellent in adhesion to a substrate, utilizing electron beam-excited CVD with a device using a simpler process and enhanced in productivity. SOLUTION: In the electron beam-excited CVD, a carbon-contg. raw gas is introduced into a vacuum vessel contg. a substrate and irradiated with an electron beam to produce plasma of the raw gas. A negative voltage at 100 to 200 V is impressed on the substrate to form a high-hardhess carbonaceoeous thin film on the substrate. The electron accelerating voltage is preferably controlled to >=50 V in an electron-beam gun. Further, the negative bias voltage to be impressed on the substrate is controlled to >=200 V in the preceding stage and to 100-200 V in the succeeding stage to improve the adhesion. |
Author | TOKAI MASAKUNI MORI YUKITAKA BAN MASAHITO RIYUUJI MAKOTO |
Author_xml | – fullname: BAN MASAHITO – fullname: MORI YUKITAKA – fullname: RIYUUJI MAKOTO – fullname: TOKAI MASAKUNI |
BookMark | eNqNjEsKwjAURTPQgb89PBdQ8EMFh6_pi4nkU9JU7KhUiSNpC7p_rOACHN0D53DnbNL1XZyxm3DeYFDOghPA0WfOIidXlSDVSeoaRGX516OGMSSvRghSWRBKG8hqIE08-PEgIzQJXbkKlEOhsTQI_JIv2fTRPl9x9dsFWwsKXCZx6Jv4Gtp77OK7ORdyu9kd0mOa4v6f5gMq2zXA |
ContentType | Patent |
DBID | EVB |
DatabaseName | esp@cenet |
DatabaseTitleList | |
Database_xml | – sequence: 1 dbid: EVB name: esp@cenet url: http://worldwide.espacenet.com/singleLineSearch?locale=en_EP sourceTypes: Open Access Repository |
DeliveryMethod | fulltext_linktorsrc |
Discipline | Medicine Chemistry Sciences |
Edition | 6 |
ExternalDocumentID | JPH10265955A |
GroupedDBID | EVB |
ID | FETCH-epo_espacenet_JPH10265955A3 |
IEDL.DBID | EVB |
IngestDate | Fri Jul 19 11:23:27 EDT 2024 |
IsOpenAccess | true |
IsPeerReviewed | false |
IsScholarly | false |
Language | English |
LinkModel | DirectLink |
MergedId | FETCHMERGED-epo_espacenet_JPH10265955A3 |
Notes | Application Number: JP19970088964 |
OpenAccessLink | https://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=19981006&DB=EPODOC&CC=JP&NR=H10265955A |
ParticipantIDs | epo_espacenet_JPH10265955A |
PublicationCentury | 1900 |
PublicationDate | 19981006 |
PublicationDateYYYYMMDD | 1998-10-06 |
PublicationDate_xml | – month: 10 year: 1998 text: 19981006 day: 06 |
PublicationDecade | 1990 |
PublicationYear | 1998 |
RelatedCompanies | KAWASAKI HEAVY IND LTD |
RelatedCompanies_xml | – name: KAWASAKI HEAVY IND LTD |
Score | 2.4869268 |
Snippet | PROBLEM TO BE SOLVED: To provide a method for forming a thin film of a high-hardness, carbonaceous highly functional material, especially the thin film... |
SourceID | epo |
SourceType | Open Access Repository |
SubjectTerms | BASIC ELECTRIC ELEMENTS CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY SEMICONDUCTOR DEVICES SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION |
Title | FORMATION OF CARBONACEOUS HIGHLY FUNCTIONAL MATERIAL THIN FILM BY ELECTRON BEAM-EXCITED PLASMA CVD |
URI | https://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=19981006&DB=EPODOC&locale=&CC=JP&NR=H10265955A |
hasFullText | 1 |
inHoldings | 1 |
isFullTextHit | |
isPrint | |
link | http://utb.summon.serialssolutions.com/2.0.0/link/0/eLvHCXMwfV1bS8MwFD7MKeqbTkXnhQjSt-KG7VofirRpajt6Y-vG9jR6E_ShG67i3_ckrs4XfQtJOCQhX84lOV8A7nqFrqZFX5Ef07KHDkqGkHrRFFnPc9xRWYkmKg8NBOHAnSjDmTprwVuTCyN4Qj8FOSIiKke81-K8Xm2DWLZ4W7m-z16xavnkJIYtFU26WB93kWRbBosjO6ISpcYwlsKR4aIi5dR5qrkDu2hGa_z5F5taPCtl9VulOEewF6O0qj6GVll14IA2P691YD_YXHhjcYO99Qlk6K8FIqJEIodQc2RFoUlZNBkT13t2_TlxJiH95rYl2BE9NCwkrhcSx_MDYs0J8xlNRijAYmYgsxnl5xaJfXMcmIRO7VO4dVhCXRkHu_hZmcUw3s7r4Qza1bIqz4EoWqqk3HbRBwUCtK_npY5ug5Zy9r4iKy6g-7ec7n-Nl3AokvL4DfrgCtr1-0d5jVq5zm7Ecn4BH--IdQ |
link.rule.ids | 230,309,783,888,25578,76884 |
linkProvider | European Patent Office |
linkToHtml | http://utb.summon.serialssolutions.com/2.0.0/link/0/eLvHCXMwfV3NT8IwFH9BNOJNUaP4VROz2yLEAfOwmK3r3HDdFhgET2RfJnoYRGb8932tIF701rTNS9v01_fRvl8Bbtq53k3yjqbeJ0UbHZQUIfXS11Q9y3BHpQWaqCI0wIOeO9YG0-60Bm_rXBjJE_opyRERURnivZLn9WITxLLl28rlbfqKVfMHJzZsJV-ni3VwFym2ZbAotEOqUGoMIiUYGi4qUkGd1zW3YBtNbF3w7LOJJbJSFr9VirMPOxFKK6sDqBVlExp0_fNaE3b56sIbiyvsLQ8hRX-Ny4gSCR1CzaEVBiZl4XhEXO_R9Z-JMw7oN7ctwY7ooWEhdr2AOJ7PifVMmM9oPEQBFjO5yqZUnFsk8s0RNwmd2Edw7bCYuioOdvazMrNBtJnX3THUy3lZnADR-omWCNtF7-UI0I6eFTq6Df1EsPflaX4Krb_ltP5rvIKGG3N_5nvB0xnsyQQ9cZveO4d69f5RXKCGrtJLubRfrh2LZQ |
openUrl | ctx_ver=Z39.88-2004&ctx_enc=info%3Aofi%2Fenc%3AUTF-8&rfr_id=info%3Asid%2Fsummon.serialssolutions.com&rft_val_fmt=info%3Aofi%2Ffmt%3Akev%3Amtx%3Apatent&rft.title=FORMATION+OF+CARBONACEOUS+HIGHLY+FUNCTIONAL+MATERIAL+THIN+FILM+BY+ELECTRON+BEAM-EXCITED+PLASMA+CVD&rft.inventor=BAN+MASAHITO&rft.inventor=MORI+YUKITAKA&rft.inventor=RIYUUJI+MAKOTO&rft.inventor=TOKAI+MASAKUNI&rft.date=1998-10-06&rft.externalDBID=A&rft.externalDocID=JPH10265955A |