FORMATION OF CARBONACEOUS HIGHLY FUNCTIONAL MATERIAL THIN FILM BY ELECTRON BEAM-EXCITED PLASMA CVD

PROBLEM TO BE SOLVED: To provide a method for forming a thin film of a high-hardness, carbonaceous highly functional material, especially the thin film excellent in adhesion to a substrate, utilizing electron beam-excited CVD with a device using a simpler process and enhanced in productivity. SOLUTI...

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Main Authors BAN MASAHITO, MORI YUKITAKA, RIYUUJI MAKOTO, TOKAI MASAKUNI
Format Patent
LanguageEnglish
Published 06.10.1998
Edition6
Subjects
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Abstract PROBLEM TO BE SOLVED: To provide a method for forming a thin film of a high-hardness, carbonaceous highly functional material, especially the thin film excellent in adhesion to a substrate, utilizing electron beam-excited CVD with a device using a simpler process and enhanced in productivity. SOLUTION: In the electron beam-excited CVD, a carbon-contg. raw gas is introduced into a vacuum vessel contg. a substrate and irradiated with an electron beam to produce plasma of the raw gas. A negative voltage at 100 to 200 V is impressed on the substrate to form a high-hardhess carbonaceoeous thin film on the substrate. The electron accelerating voltage is preferably controlled to >=50 V in an electron-beam gun. Further, the negative bias voltage to be impressed on the substrate is controlled to >=200 V in the preceding stage and to 100-200 V in the succeeding stage to improve the adhesion.
AbstractList PROBLEM TO BE SOLVED: To provide a method for forming a thin film of a high-hardness, carbonaceous highly functional material, especially the thin film excellent in adhesion to a substrate, utilizing electron beam-excited CVD with a device using a simpler process and enhanced in productivity. SOLUTION: In the electron beam-excited CVD, a carbon-contg. raw gas is introduced into a vacuum vessel contg. a substrate and irradiated with an electron beam to produce plasma of the raw gas. A negative voltage at 100 to 200 V is impressed on the substrate to form a high-hardhess carbonaceoeous thin film on the substrate. The electron accelerating voltage is preferably controlled to >=50 V in an electron-beam gun. Further, the negative bias voltage to be impressed on the substrate is controlled to >=200 V in the preceding stage and to 100-200 V in the succeeding stage to improve the adhesion.
Author TOKAI MASAKUNI
MORI YUKITAKA
BAN MASAHITO
RIYUUJI MAKOTO
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Snippet PROBLEM TO BE SOLVED: To provide a method for forming a thin film of a high-hardness, carbonaceous highly functional material, especially the thin film...
SourceID epo
SourceType Open Access Repository
SubjectTerms BASIC ELECTRIC ELEMENTS
CHEMICAL SURFACE TREATMENT
CHEMISTRY
COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
COATING MATERIAL WITH METALLIC MATERIAL
COATING METALLIC MATERIAL
DIFFUSION TREATMENT OF METALLIC MATERIAL
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL
METALLURGY
SEMICONDUCTOR DEVICES
SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION
Title FORMATION OF CARBONACEOUS HIGHLY FUNCTIONAL MATERIAL THIN FILM BY ELECTRON BEAM-EXCITED PLASMA CVD
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