METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE

• Main Authors: FUKUDA JOJI, ONODA TOSHIYASU, KASAI MASARU
• Format: Patent
• Language: English
• Published: 30.06.1998
• Edition: 6
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

PROBLEM TO BE SOLVED: To avoid a reduction in throughput in manufacturing a semiconductor device by chemical dry etching, and also remove substantially all residues of a metal film while taking care of excessively digging the metal film of an electrode connection hole. SOLUTION: A tungsten film 14 i...