SEMICONDUCTOR MEMORY DEVICE

PROBLEM TO BE SOLVED: To enable a static RAM(Random Access Memory) and moreover a product such as a microprocessor or the like mounted therewith to be enhanced in yield by a method wherein a current is prevented from leaking out of a defective word line replaced with a redundant word line. SOLUTION:...

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Bibliographic Details
Main Authors HIGETA KEIICHI, USAMI MASAMI
Format Patent
LanguageEnglish
Published 15.08.1997
Edition6
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:PROBLEM TO BE SOLVED: To enable a static RAM(Random Access Memory) and moreover a product such as a microprocessor or the like mounted therewith to be enhanced in yield by a method wherein a current is prevented from leaking out of a defective word line replaced with a redundant word line. SOLUTION: A static RAM or the like is mounted on a microprocessor or the like and possessed of a fault relief function with a redundant work line WR or the like, wherein switch MOSFETs P3 and N5 are provided between power supply voltage feeders SVC0 to SVCm or ground potential feeders SVS0 to SVSm of n+1 memory cells connected to the word lines W0 to Wm of a memory array MARY and a power supply voltage or a ground potential of a circuit, whereby the correspondent word lines are selectively turned off when any of the word lines W0 to Wm are replaced with redundant word lines WR.
Bibliography:Application Number: JP19960040738