FIELD EFFECT TRANSISTOR

PURPOSE: To extend the total gate width of an FET pallet without restrictions of the width of a package, to realize a high output, to reduce the matching loss due to phase deviation for the extension of the gate width, and to reduce the number of parts. CONSTITUTION: Arrays of gates 2a and drains 2b...

Full description

Saved in:
Bibliographic Details
Main Author ONO FUMINOBU
Format Patent
LanguageEnglish
Published 17.01.1997
Edition6
Subjects
Online AccessGet full text

Cover

Loading…