FIELD EFFECT TRANSISTOR
PURPOSE: To extend the total gate width of an FET pallet without restrictions of the width of a package, to realize a high output, to reduce the matching loss due to phase deviation for the extension of the gate width, and to reduce the number of parts. CONSTITUTION: Arrays of gates 2a and drains 2b...
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| Main Author | |
|---|---|
| Format | Patent |
| Language | English |
| Published |
17.01.1997
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| Edition | 6 |
| Subjects | |
| Online Access | Get full text |
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| Abstract | PURPOSE: To extend the total gate width of an FET pallet without restrictions of the width of a package, to realize a high output, to reduce the matching loss due to phase deviation for the extension of the gate width, and to reduce the number of parts. CONSTITUTION: Arrays of gates 2a and drains 2b of an FET pellet 2 are arranged in parallel with the transmission direction of a signal from a gate lead terminal 10 to a drain lead terminal 11. Gates, 2a and drains 2b of the FET pellet 2 are connected to internal matching circuits 5 and 6 in the direction orthogonal to this transmission signal. |
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| AbstractList | PURPOSE: To extend the total gate width of an FET pallet without restrictions of the width of a package, to realize a high output, to reduce the matching loss due to phase deviation for the extension of the gate width, and to reduce the number of parts. CONSTITUTION: Arrays of gates 2a and drains 2b of an FET pellet 2 are arranged in parallel with the transmission direction of a signal from a gate lead terminal 10 to a drain lead terminal 11. Gates, 2a and drains 2b of the FET pellet 2 are connected to internal matching circuits 5 and 6 in the direction orthogonal to this transmission signal. |
| Author | ONO FUMINOBU |
| Author_xml | – fullname: ONO FUMINOBU |
| BookMark | eNrjYmDJy89L5WQQd_N09XFRcHVzc3UOUQgJcvQL9gwO8Q_iYWBNS8wpTuWF0twMCm6uIc4euqkF-fGpxQWJyal5qSXxXgEeBpaGFkamJo7GRCgBAGNbIQA |
| ContentType | Patent |
| DBID | EVB |
| DatabaseName | esp@cenet |
| DatabaseTitleList | |
| Database_xml | – sequence: 1 dbid: EVB name: esp@cenet url: http://worldwide.espacenet.com/singleLineSearch?locale=en_EP sourceTypes: Open Access Repository |
| DeliveryMethod | fulltext_linktorsrc |
| Discipline | Medicine Chemistry Sciences |
| Edition | 6 |
| ExternalDocumentID | JPH0918254A |
| GroupedDBID | EVB |
| ID | FETCH-epo_espacenet_JPH0918254A3 |
| IEDL.DBID | EVB |
| IngestDate | Fri Jul 19 16:40:12 EDT 2024 |
| IsOpenAccess | true |
| IsPeerReviewed | false |
| IsScholarly | false |
| Language | English |
| LinkModel | DirectLink |
| MergedId | FETCHMERGED-epo_espacenet_JPH0918254A3 |
| Notes | Application Number: JP19950160585 |
| OpenAccessLink | https://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=19970117&DB=EPODOC&CC=JP&NR=H0918254A |
| ParticipantIDs | epo_espacenet_JPH0918254A |
| PublicationCentury | 1900 |
| PublicationDate | 19970117 |
| PublicationDateYYYYMMDD | 1997-01-17 |
| PublicationDate_xml | – month: 01 year: 1997 text: 19970117 day: 17 |
| PublicationDecade | 1990 |
| PublicationYear | 1997 |
| RelatedCompanies | NEC CORP |
| RelatedCompanies_xml | – name: NEC CORP |
| Score | 2.4643562 |
| Snippet | PURPOSE: To extend the total gate width of an FET pallet without restrictions of the width of a package, to realize a high output, to reduce the matching loss... |
| SourceID | epo |
| SourceType | Open Access Repository |
| SubjectTerms | AMPLIFIERS BASIC ELECTRIC ELEMENTS BASIC ELECTRONIC CIRCUITRY ELECTRICITY RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE WAVEGUIDES |
| Title | FIELD EFFECT TRANSISTOR |
| URI | https://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=19970117&DB=EPODOC&locale=&CC=JP&NR=H0918254A |
| hasFullText | 1 |
| inHoldings | 1 |
| isFullTextHit | |
| isPrint | |
| link | http://utb.summon.serialssolutions.com/2.0.0/link/0/eLvHCXMwfV3NT4MwFH-Z06g3nTrnVzgYbsQxioUDMVuBMOKAbGh2W1oKyS5zcRj_fdvKphe9NW3y-pH8-j7a93sA95iaJVLeCUWVgZgs84JdavC-61TIpAPOZLxjkjxGLyie2_MWLLe5MIon9FORIwpEFQLvtbqv1z9BLF_9rdw8sKXoensKc8_XeZMuhiXFme6PvCBL_ZTohHhxpidTLxJ6UTpDwz3YF1Y0lmAIXkcyKWX9W6OEJ3CQCWGr-hRa5aoDR2RbeK0Dh5PmvVs0G-htzqAbjoNnXxN2ZUByLZ8Ok9l4lqfTc9DCICeRIWZY7HaziLPdWqwLaAsnv7wErWJ2VVHuWg5niBaMUUbtgmPatwalazs96P0p5uqfsWs4_iZcNQ0T30C7fv8ob4UardmdOoAv_mt1Rg |
| link.rule.ids | 230,309,783,888,25576,76876 |
| linkProvider | European Patent Office |
| linkToHtml | http://utb.summon.serialssolutions.com/2.0.0/link/0/eLvHCXMwfV1JT4NAFH6p1VhvWrXWlYPhRiwFHDgQ0w4QQLZQNL01MyxJL7WxGP--M0irF71NZpI3S_LNW2be9wDuEZFLtfFOiFpJKuVlXpBBpGJk6JUqk3FBebwjjB7dF9Wfa_MOLLe5MA1P6GdDjsgQlTO81819vf4JYlnN38rNA12yrrcnJzMtsWjTxRCnOBOtqWknsRVjEWPTT8QoNV2mF7kzNNmDfWZhIw4G-3XKk1LWvzWKcwwHCRO2qk-gU6760MPbwmt9OAzb927WbKG3OYWB49mBJTC70saZkKWTaObNsjg9A8GxM-xKbIbFbjcLP9mtRTmHLnPyywsQKqpVFSkMRS-oSnJKCSVaXiAyUsaloelDGP4p5vKfsTvouVkYLAIver6Co2_yVVmS0TV06_eP8oap1JreNofxBafAeDk |
| openUrl | ctx_ver=Z39.88-2004&ctx_enc=info%3Aofi%2Fenc%3AUTF-8&rfr_id=info%3Asid%2Fsummon.serialssolutions.com&rft_val_fmt=info%3Aofi%2Ffmt%3Akev%3Amtx%3Apatent&rft.title=FIELD+EFFECT+TRANSISTOR&rft.inventor=ONO+FUMINOBU&rft.date=1997-01-17&rft.externalDBID=A&rft.externalDocID=JPH0918254A |