MAGNETORESISTANCE EFFECT ELEMENT

PROBLEM TO BE SOLVED: To reduce the step-difference of lamination structure in the vicinity of a magnetic field detecting region, by constituting lamination structure interposing a nonmagnetic layer between a first and a second magnetic layers, and practically forming at least one out of the first a...

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Bibliographic Details
Main Authors KUME MINORU, TANUMA TOSHIO
Format Patent
LanguageEnglish
Published 02.05.1997
Edition6
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRICITY
INDUCTANCES
INFORMATION STORAGE
INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORDCARRIER AND TRANSDUCER
MAGNETS
PHYSICS
SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
TRANSFORMERS
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Summary:PROBLEM TO BE SOLVED: To reduce the step-difference of lamination structure in the vicinity of a magnetic field detecting region, by constituting lamination structure interposing a nonmagnetic layer between a first and a second magnetic layers, and practically forming at least one out of the first and the second magnetic layers, only in the magnetic field detecting region. SOLUTION: An NiF layer 2, a first magnetic layer, is formed in a magnetic field detecting region on a board 1 composed of non-magnetic material like glass. A Cu layer 3, a nonmagnetic layer, is formed covering the NiFe layer 2 and the board 1. A Co layer, a second magnetic layer, is formed on the Cu layer 3. A pair of electrode lead layers 5, 6 are so formed on the Co layer 4 that a specific distance is kept between the lead layers. Since the NiFe layer 2 is formed only in the magnetic field detecting region, it is defined. Threreby the electrode lead layers 5, 6 can be formed in the parts distant from the magnetic field detecting region.
Bibliography:Application Number: JP19950274451