SEMICONDUCTOR DEVICE AND ITS MANUFACTURE

• Main Author: KATSUBE MASAKI
• Format: Patent
• Language: English
• Published: 21.06.1996
• Edition: 6
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

PURPOSE: To effectively restrain damage to a gate oxide film of an MOSFET by providing a specified protection diode connected to a wiring connected to a gate electrode of an MOS transistor. CONSTITUTION: The device has a first conductivity type semiconductor substrate 1, a second conductivity type well 4 formed in a surface of the semiconductor substrate 1 and a first MOS transistor formed in a surface of a first conductivity type region 3 of the semiconductor substrate 1. It also has a second MOS transistor formed on the surface of the well 4 and a wiring 16 connected to a gate electrode 7 of a first MOS transistor and a gate electrode 10 of the second MOS transistor. It further has a second conductivity type region 13 which is formed inside the first conductivity type region 3 of the semiconductor substrate 1 and electrically connected to the wiring 16 and a protection diode 20 including a p-n junction formed in an interface between the second conductivity type region 13 and the first conductivity type region 3, and is not electrically connected directly to the wiring 16 and the well 4.