GROWTH METHOD FOR THIN FILM OF COMPOUND SEMICONDUCTOR

PURPOSE:To form a thin film of a compound semiconductor having a mirror surface by holding a sapphire substrate in a specific temperature range and by growing a compound semiconductor at a speed higher than a growing speed without causing the growth of a three-dimensional island-shape for constituen...

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Bibliographic Details
Main Authors IKEDA MASAKIYO, NAKAI AKINOBU
Format Patent
LanguageEnglish
Published 08.12.1995
Edition6
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:PURPOSE:To form a thin film of a compound semiconductor having a mirror surface by holding a sapphire substrate in a specific temperature range and by growing a compound semiconductor at a speed higher than a growing speed without causing the growth of a three-dimensional island-shape for constituent components of the compound semiconductor on the substrate. CONSTITUTION:Sapphire is used as a substrate and H3 as a carrier gas, the substrate temperature is fixed to 1000 deg.C (900 to 1100 deg.C) and the discharge of NH3 to 3SLM, and the correlation between the growth speed of GaN crystal and the surface conditions of of crystal was checked using TMGa discharge as a parameter. As a result, the surface becomes a mirror surface when TMGa discharge exceeds 150 and the growth speed exceeds 0.26mum/min. The growth speed of crystal is increased by increasing the introducing amount of a raw material gas with the substrate temperature held at 900 to 1100 deg.C, the distribution density of growing core can be increased by setting a larger amount of absorption atoms supplied without causing the growth of a three-dimensional island shape, and a thin film of the compound semiconductor having a mirror surface can be formed.
Bibliography:Application Number: JP19940136269