MANUFACTURE OF SEMICONDUCTOR DEVICE

• Main Author: MATSUNO TOMOYUKI
• Format: Patent
• Language: English
• Published: 13.10.1995
• Edition: 6
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

PURPOSE:To effectively eliminate contamination and defect in an active region by front side gettering, without damaging the active region and contaminating the layer by the material from an ion implanter, by selectively ion-implanting material for gettering, in the surface part of the region except the active region of a wafer. CONSTITUTION:Material for gettering is selectively ion-implanted in the surface part of the region except the active region of a semiconductor wafer. For example, a resist film 2 is selectively formed on a semiconductor substrate 1, and the material for gettering such as carbon and oxygen is ion-implanted while the resist film 2 is used as a mask. Hence a getter layer 3 is formed in a scribe region 5 except the region turning to a semiconductor chip 4. It is preferable for the getter layer 3 to be formed in the initial process wherein a thick insulating film and other films are not present on the surface and it is comparatively difficult to prevent contamination. The energy and the dosage of ion implantation are changed according to the depth or the like of the active layer.