SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE

• Main Author: KATSUBE MASAKI
• Format: Patent
• Language: English
• Published: 04.08.1995
• Edition: 6
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

PURPOSE:To provide a semiconductor integrated circuit device which is high in static electricity resistance and integration. CONSTITUTION:In a semiconductor integrated circuit device which includes MOFETs, the source regions 21 and 22 and the drain region 1 of at least a first-stage MOSFET (L) of a logic circuit are so formed into shapes that they are-arranged making their sides which are straight but not curved or bent confront each other because an electric field is apt to concentrate on the curved side. Gate electrodes 51 and 52 are formed extending rectilinearly over an boundary between the source regions 21 and 22 and the drain region 1, the source region and drain region of a MOSFET which forms an inner circuit such as a logic circuit or the like and is not directly connected to an input-output section are so formed into shapes that they are arranged making their curved or bent sides confront each other, and gate electrodes are formed extending over an boundary between the source region and the drain region as they are curved or bent.