CONTROLLING METHOD FOR ION ENERGY AND ITS DEVICE

PURPOSE:To eliminate the need for applying an external bias voltage to a treated material and to reduce production costs by controlling an electron beam incident angle to the treated material or incident ion energy. CONSTITUTION:Ions in a plasma emitted in an ion chamber 12c collide with a treated m...

Full description

Saved in:
Bibliographic Details
Main Authors HAMAGAKI MANABU, HARA TAMIO
Format Patent
LanguageEnglish
Published 22.09.1994
Edition5
Subjects
ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
PLASMA TECHNIQUE
PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OFNEUTRONS
PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMICBEAMS
Online AccessGet full text

Cover

More Information
Summary:PURPOSE:To eliminate the need for applying an external bias voltage to a treated material and to reduce production costs by controlling an electron beam incident angle to the treated material or incident ion energy. CONSTITUTION:Ions in a plasma emitted in an ion chamber 12c collide with a treated material 22 supported by a supporting device 24 for a treatment such as etching. Where, control is made to adjust ion energy incoming to the material 22 by turning the device 24 to change the angle between electron beams and the surface of the material 22 from vertical to horizontal. The ion energy incoming to the material 22 is also controlled by controlling an acceleration power supply 30 to adjust the acceleration Va of the electron beams. Namely, insulating support to the material 22 by means of the device 24 applies a negative bias to the material 22 under a normal state due to the difference between the electron beams and the ions in diffusion coefft. Thus, the problem such as turbulent plasma due to the external bias voltage is solved.
Bibliography:Application Number: JP19930075303