DEVELOPER COMPOSITION FOR POSITIVE TYPE PHOTORESIST
PURPOSE:To obtain the developer compsn. for a positive type photoresist which can improve definition without degrading sensitivity by providing a developer contg. quaternary ammonium hydroxide and a prescribed quaternary ammonium halide additive. CONSTITUTION:This developer compsn. is constituted by...
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Format | Patent |
Language | English |
Published |
14.01.1992
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Subjects | |
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Abstract | PURPOSE:To obtain the developer compsn. for a positive type photoresist which can improve definition without degrading sensitivity by providing a developer contg. quaternary ammonium hydroxide and a prescribed quaternary ammonium halide additive. CONSTITUTION:This developer compsn. is constituted by having the developer contg. the quaternary ammonium hydroxide and the quaternary ammonium halide which is added thereto and is expressed by formula. In the formula, R1 to R4 are <=2C alkyl group or hydrogen; X is a halogen atom. The quaternary ammonium halide added in this constitution is small in substituent and can, therefore, easily intrude in the resister film at the time of development. The dissolving rate of the resist is greatly increased in the exposed parts of the resist in this way. Consequently, the selectivity to the dissolution of the exposed parts and the unexposed parts is improved. |
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AbstractList | PURPOSE:To obtain the developer compsn. for a positive type photoresist which can improve definition without degrading sensitivity by providing a developer contg. quaternary ammonium hydroxide and a prescribed quaternary ammonium halide additive. CONSTITUTION:This developer compsn. is constituted by having the developer contg. the quaternary ammonium hydroxide and the quaternary ammonium halide which is added thereto and is expressed by formula. In the formula, R1 to R4 are <=2C alkyl group or hydrogen; X is a halogen atom. The quaternary ammonium halide added in this constitution is small in substituent and can, therefore, easily intrude in the resister film at the time of development. The dissolving rate of the resist is greatly increased in the exposed parts of the resist in this way. Consequently, the selectivity to the dissolution of the exposed parts and the unexposed parts is improved. |
Author | YAMAGUCHI ATSUMI |
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Notes | Application Number: JP19900113632 |
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PublicationYear | 1992 |
RelatedCompanies | MITSUBISHI ELECTRIC CORP |
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Snippet | PURPOSE:To obtain the developer compsn. for a positive type photoresist which can improve definition without degrading sensitivity by providing a developer... |
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SubjectTerms | APPARATUS SPECIALLY ADAPTED THEREFOR CINEMATOGRAPHY ELECTROGRAPHY HOLOGRAPHY MATERIALS THEREFOR ORIGINALS THEREFOR PHOTOGRAPHY PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES PHYSICS |
Title | DEVELOPER COMPOSITION FOR POSITIVE TYPE PHOTORESIST |
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