DEVELOPER COMPOSITION FOR POSITIVE TYPE PHOTORESIST

PURPOSE:To obtain the developer compsn. for a positive type photoresist which can improve definition without degrading sensitivity by providing a developer contg. quaternary ammonium hydroxide and a prescribed quaternary ammonium halide additive. CONSTITUTION:This developer compsn. is constituted by...

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Main Author YAMAGUCHI ATSUMI
Format Patent
LanguageEnglish
Published 14.01.1992
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Abstract PURPOSE:To obtain the developer compsn. for a positive type photoresist which can improve definition without degrading sensitivity by providing a developer contg. quaternary ammonium hydroxide and a prescribed quaternary ammonium halide additive. CONSTITUTION:This developer compsn. is constituted by having the developer contg. the quaternary ammonium hydroxide and the quaternary ammonium halide which is added thereto and is expressed by formula. In the formula, R1 to R4 are <=2C alkyl group or hydrogen; X is a halogen atom. The quaternary ammonium halide added in this constitution is small in substituent and can, therefore, easily intrude in the resister film at the time of development. The dissolving rate of the resist is greatly increased in the exposed parts of the resist in this way. Consequently, the selectivity to the dissolution of the exposed parts and the unexposed parts is improved.
AbstractList PURPOSE:To obtain the developer compsn. for a positive type photoresist which can improve definition without degrading sensitivity by providing a developer contg. quaternary ammonium hydroxide and a prescribed quaternary ammonium halide additive. CONSTITUTION:This developer compsn. is constituted by having the developer contg. the quaternary ammonium hydroxide and the quaternary ammonium halide which is added thereto and is expressed by formula. In the formula, R1 to R4 are <=2C alkyl group or hydrogen; X is a halogen atom. The quaternary ammonium halide added in this constitution is small in substituent and can, therefore, easily intrude in the resister film at the time of development. The dissolving rate of the resist is greatly increased in the exposed parts of the resist in this way. Consequently, the selectivity to the dissolution of the exposed parts and the unexposed parts is improved.
Author YAMAGUCHI ATSUMI
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Snippet PURPOSE:To obtain the developer compsn. for a positive type photoresist which can improve definition without degrading sensitivity by providing a developer...
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SubjectTerms APPARATUS SPECIALLY ADAPTED THEREFOR
CINEMATOGRAPHY
ELECTROGRAPHY
HOLOGRAPHY
MATERIALS THEREFOR
ORIGINALS THEREFOR
PHOTOGRAPHY
PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES
PHYSICS
Title DEVELOPER COMPOSITION FOR POSITIVE TYPE PHOTORESIST
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