FORMATION OF SCHOTTKY JUNCTION

• Main Author: YAMAGISHI HARUO
• Format: Patent
• Language: English
• Published: 28.07.1992
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

PURPOSE:To obtain a forming method of an electrode provided with Schottky junction which is storing against heat and is stable by forming a Ta layer with a specific layer thickness at one part of a main surface of a III-V compound semiconductor substrate by the electronic beam deposition method, by forming a TaN layer by the sputtering method, and then by performing heat treatment. CONSTITUTION:A Ta layer 6 with a layer thickness of 50-150Angstrom is formed at one part of a main surface of III-V compound semiconductor substrates 1 and 2 by the electronic beam deposition method and then a TaN layer 7 is laminated and formed on the said Ta layer 6 by the sputtering method. Then, heat treatment is performed to the semiconductor substrates 1 and 2 where the said lamination layers 6 and 7 are provided. For example, the GaAs substrate 1 where one part of the GaAs operation layer 2 is exposed is accommodated in an electronic beam deposition device and the Ta layer 6 with a thickness of 100Angstrom is coated. Then, the GaAs substrate is accommodated within a sputtering device readily and the TaN layer 7 with a thickness of 2000Angstrom is formed. After that, the TaN layer 7 and the Ta layer 6 at areas other than an area 5 where a gate electrode is to be formed are eliminated by the lift-off method, are accommodated within a heat treatment furnace, and then heat treatment is performed at 400 deg.C for 20 minutes within an Ar atmosphere.