MANUFACTURE OF GATE TURN-OFF THYRISTOR

• Main Authors: HARADA MANA, AKASAKA YOICHI
• Format: Patent
• Language: English
• Published: 07.04.1992
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

PURPOSE:To enable the element to be manufactured easily with excellent precision conforming to the design by a method wherein the first region of the second conductivity type high concentration impurities are selectively formed in relatively deep region from a substrate main surface by MeV implantation process so that the first region of the second conductivity type high concentration impurities may not be exposed in the surface. CONSTITUTION:An anode layer 2 is formed on the opposite surface to the main surface of a substrate 1 and then P<+> base regions 51, 52 are formed in the relatively deed regions by selectively implanting P type impurities by MeV implantation process using thick film resists 4, etc., as masks through the intermediary of a thin oxide film 31. Next, P base regions 6 in relatively low concentration are formed in almost the same depth as that of the regions 51, 52 similar to the formation of these regions 51, 52 by the MeV ion implantation process and after connecting to either the P<+> base region 51 or 52 and performing the annealing process, the surface oxide film 31 is removed to form an N type epitaxial layer 7. Finally, N type impurities are diffused on the surface of the epitaxial layer 7 to form a high concentration N<+> region 8.