SEMICONDUCTOR MEMORY DEVICE
PURPOSE:To obtain the semiconductor memory device of large capacity to be completely operated at a low cost by storing the presence and absence of a defective memory cell for each block in the memory cell of each memory element and switching a bus line so as to select the other memory element when t...
Saved in:
Main Author | |
---|---|
Format | Patent |
Language | English |
Published |
30.01.1991
|
Subjects | |
Online Access | Get full text |
Cover
Loading…
Abstract | PURPOSE:To obtain the semiconductor memory device of large capacity to be completely operated at a low cost by storing the presence and absence of a defective memory cell for each block in the memory cell of each memory element and switching a bus line so as to select the other memory element when the block equipped with the defective memory cell is designated. CONSTITUTION:A control means 6 stores the presence and absence of the defective cell in the form of a map for each block in each memory element 1 to a ROM, etc. When an address signal ADD designate one row, which is composed of M-pieces of the elements 1 more than a unit bit number N of data, through a designating means 3, the means 6 refers the contents of the ROM. In the case of a block X equipped with the defective bit, a bus switching means 5 is controlled and a bus 2 is switched. Then, out of external buses 4, one corresponding bus is connected. Thus, the data of the N bits can be read from the element 1 and the device of the large capacity to be stably operated can be obtained at a low cost. |
---|---|
AbstractList | PURPOSE:To obtain the semiconductor memory device of large capacity to be completely operated at a low cost by storing the presence and absence of a defective memory cell for each block in the memory cell of each memory element and switching a bus line so as to select the other memory element when the block equipped with the defective memory cell is designated. CONSTITUTION:A control means 6 stores the presence and absence of the defective cell in the form of a map for each block in each memory element 1 to a ROM, etc. When an address signal ADD designate one row, which is composed of M-pieces of the elements 1 more than a unit bit number N of data, through a designating means 3, the means 6 refers the contents of the ROM. In the case of a block X equipped with the defective bit, a bus switching means 5 is controlled and a bus 2 is switched. Then, out of external buses 4, one corresponding bus is connected. Thus, the data of the N bits can be read from the element 1 and the device of the large capacity to be stably operated can be obtained at a low cost. |
Author | BABA FUMIO |
Author_xml | – fullname: BABA FUMIO |
BookMark | eNrjYmDJy89L5WSQDnb19XT293MJdQ7xD1LwdfX1D4pUcHEN83R25WFgTUvMKU7lhdLcDApuriHOHrqpBfnxqcUFicmpeakl8V4BHgbGRkZGlpaOxkQoAQD5pCI- |
ContentType | Patent |
DBID | EVB |
DatabaseName | esp@cenet |
DatabaseTitleList | |
Database_xml | – sequence: 1 dbid: EVB name: esp@cenet url: http://worldwide.espacenet.com/singleLineSearch?locale=en_EP sourceTypes: Open Access Repository |
DeliveryMethod | fulltext_linktorsrc |
Discipline | Medicine Chemistry Sciences Physics |
ExternalDocumentID | JPH0322299A |
GroupedDBID | EVB |
ID | FETCH-epo_espacenet_JPH0322299A3 |
IEDL.DBID | EVB |
IngestDate | Fri Jul 19 14:45:02 EDT 2024 |
IsOpenAccess | true |
IsPeerReviewed | false |
IsScholarly | false |
Language | English |
LinkModel | DirectLink |
MergedId | FETCHMERGED-epo_espacenet_JPH0322299A3 |
Notes | Application Number: JP19900068676 |
OpenAccessLink | https://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=19910130&DB=EPODOC&CC=JP&NR=H0322299A |
ParticipantIDs | epo_espacenet_JPH0322299A |
PublicationCentury | 1900 |
PublicationDate | 19910130 |
PublicationDateYYYYMMDD | 1991-01-30 |
PublicationDate_xml | – month: 01 year: 1991 text: 19910130 day: 30 |
PublicationDecade | 1990 |
PublicationYear | 1991 |
RelatedCompanies | FUJITSU LTD |
RelatedCompanies_xml | – name: FUJITSU LTD |
Score | 2.405797 |
Snippet | PURPOSE:To obtain the semiconductor memory device of large capacity to be completely operated at a low cost by storing the presence and absence of a defective... |
SourceID | epo |
SourceType | Open Access Repository |
SubjectTerms | BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY INFORMATION STORAGE PHYSICS SEMICONDUCTOR DEVICES STATIC STORES |
Title | SEMICONDUCTOR MEMORY DEVICE |
URI | https://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=19910130&DB=EPODOC&locale=&CC=JP&NR=H0322299A |
hasFullText | 1 |
inHoldings | 1 |
isFullTextHit | |
isPrint | |
link | http://utb.summon.serialssolutions.com/2.0.0/link/0/eLvHCXMwfV1LT8MwDLbGeN5gMDEGqAfUW8XKmrY5VIilrUqlPlS2aZympc2kXcZEi_j7OKUbXEC5OZKTWPrsOH4E4G6gc4sIQjRi20vNEKbQFgUZauhMcGrSfIH6QWZbxGYwMcIZmbVgta2FqfuEftbNERFROeK9qvX15ucRy61zK8t7vkLS26M_dly1aMrFdBmIU92R46WJmzCVMSdM1ThzgoEMKVD6tAf7eIu2JBi86UgWpWx-WxT_FA5SZLauzqAl1h04ZtuP1zpwFDXx7g4c1gmaeYnEBoTlOfRfpOyS2J2wcZIpkRcl2avietNn5l2A4ntjFmi43nx3tnmY7nY27EIbXX5xCQofmBwHoWiNDaoX3C6WDwSxaC1ySmy9B70_2Vz9M9eHk-9UJ_nmdA3t6v1D3KBRrfhtLY4vB013mw |
link.rule.ids | 230,309,783,888,25576,76876 |
linkProvider | European Patent Office |
linkToHtml | http://utb.summon.serialssolutions.com/2.0.0/link/0/eLvHCXMwfV1LT8JAEJ4gPvCmqBHx0YPprZFCt3QPjZFtSUH6SC0ET023LQkXJLbGv-9sBfSi2dtsMrs7yTezs_NYgPuOyvskJ0QhhrFQtFzPlSQjPQWdCU51miaoH0S2hac7U208J_MaLLe1MFWf0M-qOSIiKkW8l5W-Xv88YllVbmXxwJdIenscRqYlZ5tyMVUE4mRrYNqBb_lMZswcB7IXmk5HhBQofdqDfbxh9wUY7NlAFKWsf1uU4QkcBMhsVZ5CLV81ocG2H6814cjdxLubcFglaKYFEjcgLM6g_SJk53vWlEV-KLm264evkmXPRsw-B2loR8xRcL14d7Z4HOx21ruAOrr8-SVIvKNzHISiNdaomnEjW3QJYrGfpJQYagtaf7K5-mfuDhpO5E7iych7bsPxd9qTeH-6hnr5_pHfoIEt-W0lmi_NkXqO |
openUrl | ctx_ver=Z39.88-2004&ctx_enc=info%3Aofi%2Fenc%3AUTF-8&rfr_id=info%3Asid%2Fsummon.serialssolutions.com&rft_val_fmt=info%3Aofi%2Ffmt%3Akev%3Amtx%3Apatent&rft.title=SEMICONDUCTOR+MEMORY+DEVICE&rft.inventor=BABA+FUMIO&rft.date=1991-01-30&rft.externalDBID=A&rft.externalDocID=JPH0322299A |