FORMING METHOD OF RESIST PATTERN

• Main Author: INAI TORU
• Format: Patent
• Language: English
• Published: 01.08.1991
• Subjects: APPARATUS SPECIALLY ADAPTED THEREFOR; BASIC ELECTRIC ELEMENTS; CINEMATOGRAPHY; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; ELECTROGRAPHY; HOLOGRAPHY; MATERIALS THEREFOR; ORIGINALS THEREFOR; PHOTOGRAPHY; PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES; PHYSICS; SEMICONDUCTOR DEVICES

PURPOSE:To improve accuracy by forming a resist layer containing a dye stuff onto a substrate with a stepped section, irradiating the resist layer with the light of patterning by using a mask, successively executing heat treatment and exposure treatment by short wavelength light to the resist layer and developing the resist layer. CONSTITUTION:The upper section of a substrate 1 with a stepped section 2 is coated with a positive type photo-resist solution containing a dye, and a resist layer 3 is formed through drying and preheating. When the resist layer 3 is irradiated with light 5 by employing a mask plate 4, light 5a reflected by the stepped section 2 also reaches to the lower section of the mask plate 4, and a resist layer in the lower section of the mask plate partially contains non-sensitizing sensitizing groups 3c and sensitized sensitizing groups 3b. A resist layer 3a sensitized in a specified pattern is thermally treated by using a hot plate 6. When short wave-length light 7 is applied from the upper section of the resist layer, an exposed section 3d is formed, and an unexposed section 3e is formed under the exposed section 3d. The resist layer is developed, and a pattern 3f is formed.