WIRING PATTERN
PURPOSE:To prevent disconnection and to improve reliability by making line widths of a wiring pattern at a lower potential are larger than ones at a higher potential. CONSTITUTION:A wiring pattern 3 in which the line width of a lower potential is larger than that of a higher potential is provided. A...
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Main Authors | , , , |
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Format | Patent |
Language | English |
Published |
31.01.1990
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Subjects | |
Online Access | Get full text |
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Abstract | PURPOSE:To prevent disconnection and to improve reliability by making line widths of a wiring pattern at a lower potential are larger than ones at a higher potential. CONSTITUTION:A wiring pattern 3 in which the line width of a lower potential is larger than that of a higher potential is provided. According to such a pattern 3, a disconnection does not occur even after an electromigration generated upon movement of a wiring material from a lower potential to a higher potential since the supply of the material is large near the position L of lower potential. An arrow shows the electromigration movement. When the line width of the higher potential is excessively thin than that of the lower potential, the moved material is raised to be possibly disconnected. Accordingly, the ratio of the line width of higher voltage to lower voltage is desirably ranged A:B at 1:1.1-1:10 and more preferably A:B=1.1.5-1.2 approximately. |
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AbstractList | PURPOSE:To prevent disconnection and to improve reliability by making line widths of a wiring pattern at a lower potential are larger than ones at a higher potential. CONSTITUTION:A wiring pattern 3 in which the line width of a lower potential is larger than that of a higher potential is provided. According to such a pattern 3, a disconnection does not occur even after an electromigration generated upon movement of a wiring material from a lower potential to a higher potential since the supply of the material is large near the position L of lower potential. An arrow shows the electromigration movement. When the line width of the higher potential is excessively thin than that of the lower potential, the moved material is raised to be possibly disconnected. Accordingly, the ratio of the line width of higher voltage to lower voltage is desirably ranged A:B at 1:1.1-1:10 and more preferably A:B=1.1.5-1.2 approximately. |
Author | MORI KOJI ISHIDA MAMORU HIROI MASAKI SANO YUTAKA |
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Notes | Application Number: JP19880180058 |
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RelatedCompanies | RICOH RES INST OF GEN ELECTRON RICOH CO LTD |
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Snippet | PURPOSE:To prevent disconnection and to improve reliability by making line widths of a wiring pattern at a lower potential are larger than ones at a higher... |
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SubjectTerms | BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES |
Title | WIRING PATTERN |
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