WET ETCHING METHOD

• Main Authors: KANEMITSU HIDEYUKI, HOSHINO EIICHI
• Format: Patent
• Language: English
• Published: 06.11.1990
• Subjects: BASIC ELECTRIC ELEMENTS; CHEMICAL SURFACE TREATMENT; CHEMISTRY; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING MATERIAL WITH METALLIC MATERIAL; COATING METALLIC MATERIAL; DIFFUSION TREATMENT OF METALLIC MATERIAL; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL; METALLURGY; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLICMATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASSC23 AND AT LEAST ONEPROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25; NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; SEMICONDUCTOR DEVICES

PURPOSE:To prevent deterioration in pattern quality by a method wherein an antistatic agent layer applied and formed on the surface of a resist film is dried and with this resist film used as a mash, an etched film below an opening is selectively solved and removed. CONSTITUTION:A resist film 3 having an opening 4 for etching is formed on an etched film 2, and after an antistatic agent film 5 is applied and formed on the surface of the resist film 3 including the inner of the opening 4, the antistatic agent film 5 is dried. Then with the resist film 3 having the antistatic film 5 used as a mask, the etched film 2 below the opening is selectively solved and removed by etching solution 6. Therefore the etched film 2 in the opening 4 for etching can be completely solved and removed without etching residual left. Thus deterioration in pattern precision and manufacture yielding due to soaking of the etching solution 6 or peeling of the film, etc., caused by overetching can be prevented.