ELECTRODE FORMATION OF SILICON CARBIDE SEMICONDUCTOR ELEMENT

• Main Authors: NAKADA TOSHITAKE, OTA KIYOSHI, FUJIKAWA YOSHIHARU
• Format: Patent
• Language: English
• Published: 24.04.1990
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

PURPOSE:To form an electrode in n-type SiC capable of firm wire-bonding process by a method wherein an Au/Ni electrode film is laminated on an n-type silicon carbide to be heat-treated at high temperature and then an Au/Cr electrode film is laminated on the Au/Ni electrode to be heat-treated at low...