PRODUCTION OF THIN FILM TRANSISTOR FOR MATRIX TYPE DISPLAY DEVICE

• Main Authors: OURA MICHIYA, OKI KENICHI, YANAI KENICHI, ENDO TETSURO, KAMATA TAKESHI
• Format: Patent
• Language: English
• Published: 26.06.1989
• Subjects: BASIC ELECTRIC ELEMENTS; DEVICES OR ARRANGEMENTS, THE OPTICAL OPERATION OF WHICH ISMODIFIED BY CHANGING THE OPTICAL PROPERTIES OF THE MEDIUM OF THEDEVICES OR ARRANGEMENTS FOR THE CONTROL OF THE INTENSITY,COLOUR, PHASE, POLARISATION OR DIRECTION OF LIGHT, e.g.SWITCHING, GATING, MODULATING OR DEMODULATING; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; FREQUENCY-CHANGING; NON-LINEAR OPTICS; OPTICAL ANALOGUE/DIGITAL CONVERTERS; OPTICAL LOGIC ELEMENTS; OPTICS; PHYSICS; SEMICONDUCTOR DEVICES; TECHNIQUES OR PROCEDURES FOR THE OPERATION THEREOF

PURPOSE:To attain a contact hole forming stage and a gate pattern forming stage only by one resist coating stage, to simplify a production process and to reduce the cost of the title method by using image reversal photoresist. CONSTITUTION:An image reversal photoresist film 13 is formed by spin coating and exposed to light through a mask and then developing treatment is executed. Then, the film 13 is exposed to light through another mask, baked, the whole surface of the film is exposed to light and a resist pattern part is divided into an exposed part P insoluble in a developing solution and an unexposed part Q soluble in the developing solution. After removing the soluble unexposed part Q by developing processing, a metal layer 17 is evapolated. Then, lift-off operation is executed by the residual exposed part P to obtain an upper electrode pattern to be connected to ground electrodes S, D through a contact hole 15. Consequently, the resist film applying stage can be reduced as compared with an ordinary method, production yield can be improved by simplifying the production stage of a TFT substrate and the cost of production can be reduced.