CAPACITOR STRUCTURE AND SEMICONDUCTOR DEVICE INCLUDING THE SAME

To provide a capacitor structure that has improved electric characteristics.SOLUTION: A capacitor structure includes: a lower electrode formed on a substrate; a lower electrode structure which comprises an electrode structure having a plurality of electrode patterns laminated on the lower electrode...

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Bibliographic Details
Main Authors KWON HYUKWOO, CHOI YUNSEOK, KIM MUNJUN, LEE JUN-WON
Format Patent
LanguageEnglish
Japanese
Published 07.05.2024
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:To provide a capacitor structure that has improved electric characteristics.SOLUTION: A capacitor structure includes: a lower electrode formed on a substrate; a lower electrode structure which comprises an electrode structure having a plurality of electrode patterns laminated on the lower electrode along a vertical direction perpendicular to a top surface of the substrate; a dielectric pattern which comes into contact with the lower electrode structure; and an upper electrode which comes into contact with the dielectric pattern.SELECTED DRAWING: Figure 1 【課題】改善された電気的特性を有するキャパシタ構造物を提供する。【解決手段】本発明によるキャパシタ構造物は、基板上に形成された下部電極、及び基板の上面に垂直な垂直方向に沿って下部電極上に積層された複数の電極パターンを含む電極構造物を備える下部電極構造物と、下部電極構造物に接触する誘電パターンと、誘電パターンに接触する上部電極と、を含む。【選択図】図１
Bibliography:Application Number: JP20230178829