SEMICONDUCTOR LIGHT-EMITTING ELEMENT AND MANUFACTURING METHOD FOR SEMICONDUCTOR LIGHT-EMITTING ELEMENT

• Main Authors: SUEMOTO YUYA, KAMIYAMA SATOSHI, KAMIOKA YOSHIHIRO, TAKEUCHI TETSUYA, IWATANI MOTOAKI, MESHIDA MASAMI, JINNO YUKIMI, IIHAMA JUNYA, KUSUNOSE YOSHIRO
• Format: Patent
• Language: English; Japanese
• Published: 02.04.2024
• Subjects: BASIC ELECTRIC ELEMENTS; DEVICES USING STIMULATED EMISSION; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

To provide a semiconductor light-emitting element in which the resistance increase of a p+ GAN layer containing Mg at high concentration can be prevented and the driving voltage is reduced.SOLUTION: In a semiconductor light-emitting element 100 on a GaN substrate 110, on a first n-type GaN layer 131 with a nanowire structure, a light-emitting layer 132, a p-type GaN layer 133, a tunnel junction layer 134, and a second n-type GaN layer 140 are stacked in this order. The first n-type GaN layer includes a Si-containing GaN layer. The light-emitting layer includes a layer with an InGaN layer and a GaN layer. The p-type GaN layer includes a Mg-containing GaN layer. The tunnel junction layer includes a multilayer body in which an n+-type GaN layer 136 is stacked on a p+-type GaN layer 135. The n+-type GaN layer is an n+-type GaN sputtering film and the second n-type GaN layer includes a Si-containing GaN layer.SELECTED DRAWING: Figure 3 【課題】Ｍｇを高濃度に含む該ｐ＋ＧａＮ層の高抵抗化を防止でき、駆動電圧が低減された半導体発光素子を提供する。【解決手段】ＧａＮ基板１１０上の半導体発光素子１００であって、ナノワイヤ構造の第１のｎ型ＧａＮ層１３１上に、発光層１３２、ｐ型ＧａＮ層１３３、トンネル接合層１３４、及び第２のｎ型ＧａＮ層１４０が、この順で積層しており、第１のｎ型ＧａＮ層は、Ｓｉ含有ＧａＮ層からなり、発光層は、ＩｎＧａＮ層とＧａＮ層とを有する層からなり、ｐ型ＧａＮ層は、Ｍｇ含有ＧａＮ層からなり、トンネル接合層は、ｐ＋型ＧａＮ層１３５上にｎ＋型ＧａＮ層１３６が積層した積層体からなり、ｎ＋型ＧａＮ層は、ｎ＋型ＧａＮスパッタ膜であり、第２のｎ型ＧａＮ層は、Ｓｉ含有ＧａＮ層からなる、半導体発光素子である。【選択図】図３