SEMICONDUCTOR NANOPARTICLE AND MANUFACTURING METHOD THEREFOR

• Main Authors: UEMATSU TARO, TORIMOTO TSUKASA, KUWAHATA SUSUMU, OYAMATSU DAISUKE, KAMEYAMA TATSUYA, WAJIMA TOMOTAKA, NIKI KENTA
• Format: Patent
• Language: English; Japanese
• Published: 24.10.2023
• Subjects: ADHESIVES; CHEMISTRY; COMPOUNDS CONTAINING METALS NOT COVERED BY SUBCLASSESC01D OR C01F; DYES; INORGANIC CHEMISTRY; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES; MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FORELSEWHERE; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; METALLURGY; MISCELLANEOUS APPLICATIONS OF MATERIALS; MISCELLANEOUS COMPOSITIONS; NANOTECHNOLOGY; NATURAL RESINS; PAINTS; PERFORMING OPERATIONS; POLISHES; SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; TRANSPORTING

To provide a semiconductor nanoparticle having a constitution providing a band edge light emission from ternary system quantum dots with potential for low toxicity.SOLUTION: A semiconductor nanoparticle includes: a first semiconductor including M1, M2, and Z, where M1 is at least one element selected from the group consisting of Ag, Cu and Au, M2 is at least one element selected from the group consisting of Al, Ga, In and Tl, and Z is at least one element selected from the group consisting of S, Se and Te; and a second semiconductor that is disposed on the surface of the first semiconductor and has a band gap energy higher than that of the first semiconductor. The semiconductor nanoparticle has an emission lifetime of 200 ns or less.SELECTED DRAWING: None 【課題】低毒性の組成とし得る三元系の量子ドットからバンド端発光が得られる構成を備えた、半導体ナノ粒子を提供する。【解決手段】Ｍ１、Ｍ２、およびＺを含み、Ｍ１が、Ａｇ、ＣｕおよびＡｕからなる群より選ばれる少なくとも一種の元素であり、Ｍ２が、Ａｌ、Ｇａ、ＩｎおよびＴｌからなる群より選ばれる少なくとも一種の元素であり、Ｚが、Ｓ、ＳｅおよびＴｅからなる群より選ばれる少なくとも一種の元素である第１半導体と、前記第１半導体の表面に配置され、前記第１半導体よりもバンドギャップエネルギーが大きい第２半導体と、を含み、発光寿命が２００ｎｓ以下である半導体ナノ粒子である。【選択図】なし