CLEANING STRUCTURE SURFACE IN EUV CHAMBER

• Main Authors: DAVID ROBERT EVANS, DENIZ VAN HEIJNSBERGEN, MA YUE, BAEK JONGHOON, XIA CHUNGUANG, JOHN TOM STEWART IV, DZIOMKINA NINA VLADIMIROVNA, ANDREW DAVID LAFORGE
• Format: Patent
• Language: English; Japanese
• Published: 20.10.2023
• Subjects: APPARATUS SPECIALLY ADAPTED THEREFOR; CINEMATOGRAPHY; ELECTROGRAPHY; HOLOGRAPHY; MATERIALS THEREFOR; ORIGINALS THEREFOR; PHOTOGRAPHY; PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES; PHYSICS

To provide a method of cleaning a structure surface in an EUV chamber.SOLUTION: In some general aspects, a surface of a structure within a chamber of an extreme ultraviolet (EUV) light source is cleaned using a method. The method includes generating a plasma state of a material that is present at a location adjacent to a non-electrically conductive body that is within the chamber. The generation of the plasma state of the material includes electromagnetically inducing an electric current at the location adjacent to the non-electrically conductive body to thereby transform the material that is adjacent to the non-electrically conductive body from a first state into the plasma state. The plasma state of the material includes plasma particles, at least some of which are free radicals of the material. The method also includes enabling the plasma particles to pass over the structure surface to remove debris from the structure surface without removing the structure from the chamber of the EUV light source.SELECTED DRAWING: Figure 2A 【課題】ＥＵＶチャンバにおける構造物表面の洗浄方法を提供する。【解決手段】いくつかの一般的な態様においては、極端紫外線（ＥＵＶ）光源のチャンバ内の構造物の表面は、ある方法を用いて洗浄される。その方法は、チャンバ内にある非導電体に隣接する場所に存在する材料のプラズマ状態を発生させることを含む。材料のプラズマ状態の発生は、非導電体に隣接する場所で電流を電磁的に誘起し、それによって非導電体に隣接する材料を第１の状態からプラズマ状態に変化させることを含む。材料のプラズマ状態はプラズマ粒子を含み、その少なくともいくつかは材料のフリーラジカルである。方法は、プラズマ粒子に構造物表面を通過させて構造物をＥＵＶ光源のチャンバから取り外すことなく構造物表面からデブリを除去することも含む。【選択図】 図２Ａ