SUBSTRATE PROCESSING APPARATUS

• Main Authors: GAMA HIROMITSU, NAKAZAWA KAZUHIKO, MORIOKA TOSHIHITO, OTA TAKASHI
• Format: Patent
• Language: English; Japanese
• Published: 05.10.2023
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

To improve the stability of holding of a substrate while suppressing the adhesion of a processing liquid to the lower surface of a substrate.SOLUTION: A substrate processing apparatus transmits gas between a lower surface 92 of a substrate 9 and a base surface 210 of a base portion 21 to form an airflow 93 radially outward, and causes the Bernoulli effect to generate a pressure drop in a space between the substrate 9 and the base portion 21. A second surface 212 of the base surface 210 faces upward as it goes radially outward. A third surface 213 extends downward as it goes radially outward from the outer peripheral edge of the second surface 212. The fourth surface 214 is an annular surface that is continuous with the lower edge of the third surface 213. The fourth surface 214 extends radially outward from the outer peripheral edge of the substrate 9 in the radial direction. Thereby, adhesion of a processing liquid to the lower surface 92 of the substrate 9 can be suppressed, and the stability of holding the substrate 9 can also be improved.SELECTED DRAWING: Figure 5 【課題】基板の下面への処理液の付着を抑制しつつ基板の保持の安定性を向上する。【解決手段】基板処理装置では、基板９の下面９２とベース部２１のベース面２１０との間にガスを送出して径方向外方へと向かう気流９３を形成し、ベルヌーイ効果によって基板９とベース部２１との間の空間に圧力降下を生じさせる。ベース面２１０の第２面２１２は、径方向外方に向かうに従って上方へと向かう。第３面２１３は、第２面２１２の外周縁から径方向外方に向かうに従って下方へと向かう。第４面２１４は、第３面２１３の下端縁に連続する円環状の面である。第４面２１４は、基板９の外周縁よりも径方向外側にて径方向外方へと広がる。これにより、基板９の下面９２への処理液の付着を抑制することができるとともに、基板９の保持の安定性を向上することもできる。【選択図】図５