CATALYST CHARGING CONTAINER

• Main Authors: YOSHIKAWA TATSUYA, HAYASAKA ATSUSHI, IZUMI KEIHIRO, KOSHIRO TAKUJI, SERAI TETSURO
• Format: Patent
• Language: English; Japanese
• Published: 14.09.2023
• Subjects: BASIC ELECTRIC ELEMENTS; CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOIDCHEMISTRY; ELECTRICITY; PERFORMING OPERATIONS; PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL; PROCESSES OR MEANS, e.g. BATTERIES, FOR THE DIRECT CONVERSIONOF CHEMICAL INTO ELECTRICAL ENERGY; THEIR RELEVANT APPARATUS; TRANSPORTING

To provide a catalyst charging container that is capable of preventing deterioration in efficiency of chemical reaction of reactant gas while preventing lowering of dimensional accuracy due to press working.SOLUTION: A catalyst charging container is configured such that a flow channel length in a direction crossing a top-and-bottom direction is larger than a flow channel height in the top-and-bottom direction. A top plate 20 is arranged at an upper side in the top-and-bottom direction of a catalyst charging flow channel 61, and forms an upper wall 21 of the catalyst charging flow channel 61. A bottom plate 30 is arranged at a lower side in the top-and-bottom direction of the catalyst charging flow channel 61, and forms a lower wall 31 of the catalyst charging flow channel 61. A catalyst 60 is charged into the catalyst charging flow channel 61 formed between the top plate 20 and the bottom plate 30, and promotes a chemical reaction of reactant gas flowing in the catalyst charging flow channel 61. In the catalyst charging container, an opening height H_IN in the top-and-bottom direction in an inlet 70 through which reactant gas flows into the catalyst charging flow channel 61 is different from an opening height H_OUT in the top-and-bottom direction in an outlet 80 through which reactant gas flows out from the catalyst charging flow channel 61.SELECTED DRAWING: Figure 2 【課題】プレス加工による寸法精度の悪化を防ぎつつ、反応ガスの化学反応の効率低下を防ぐことの可能な触媒充填容器を提供する。【解決手段】触媒充填容器は、天地方向に対し交差する方向の流路長さが天地方向の流路高さより大きい構成である。天板２０は、触媒充填流路６１の天地方向上側に配置され、触媒充填流路６１の上壁２１を構成する。底板３０は、触媒充填流路６１の天地方向下側に配置され、触媒充填流路６１の下壁３１を構成する。触媒６０は、天板２０と底板３０との間に形成される触媒充填流路６１内に充填され、触媒充填流路６１内を流れる反応ガスの化学反応を促進させるものである。この触媒充填容器は、触媒充填流路６１に反応ガスが流入する入口７０における天地方向の開口高さＨ_ＩＮと、触媒充填流路６１から反応ガスが流出する出口８０における天地方向の開口高さＨ_ＯＵＴとが異なっている。【選択図】図２