CLEANING SURFACE OF OPTIC LOCATED IN CHAMBER OF EXTREME ULTRAVIOLET LIGHT SOURCE

To provide systems and methods for cleaning a surface of an optic located in a chamber of an extreme ultraviolet light source.SOLUTION: Described is a method of cleaning a surface of an optic (115) within a chamber (125) of an extreme ultraviolet (EUV) light source (100). The chamber is held at a pr...

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Main Authors BAEK JONGHOON, MATHEW CHEERAN ABRAHAM
Format Patent
LanguageEnglish
Japanese
Published 15.06.2023
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Abstract To provide systems and methods for cleaning a surface of an optic located in a chamber of an extreme ultraviolet light source.SOLUTION: Described is a method of cleaning a surface of an optic (115) within a chamber (125) of an extreme ultraviolet (EUV) light source (100). The chamber is held at a pressure below atmospheric pressure. The method includes generating a material in a plasma state at a location adjacent to an optical surface (110) and within the chamber, the generating step comprising transforming a native material (135) that is already present within the vacuum chamber and adjacently to the optical surface from a first state into the plasma state (130). The plasma state of the material includes free radicals of the material. The material in the plasma state is generated by enabling the material in the plasma state to move to the entire optical surface to remove debris (107) from the optical surface without removing the optic from the EUV light source.SELECTED DRAWING: Figure 1 【課題】極端紫外線光源のチャンバ内の光学系の表面を洗浄するためのシステム及び方法を提供する。【解決手段】極端紫外線(EUV)光源(100)のチャンバ(125)内の光学系(115)の表面を洗浄する方法が記載される。チャンバは大気圧よりも低い圧力に保持されている。方法は、光表面(110)に隣接したチャンバ内の位置においてプラズマ状態の材料を発生させることを含む。発生させることは、真空チャンバ内で光表面に隣接してすでに存在しているネイティブ材料(135)を第1の状態からプラズマ状態(130)に変換することを含む。材料のプラズマ状態は材料のフリーラジカルを含む。プラズマ状態の材料を発生させるため、プラズマ状態の材料を光表面全体へ移動させて、EUV光源から光学系を取り出すことなく光表面からのデブリ(107)の除去を可能とする。【選択図】図1
AbstractList To provide systems and methods for cleaning a surface of an optic located in a chamber of an extreme ultraviolet light source.SOLUTION: Described is a method of cleaning a surface of an optic (115) within a chamber (125) of an extreme ultraviolet (EUV) light source (100). The chamber is held at a pressure below atmospheric pressure. The method includes generating a material in a plasma state at a location adjacent to an optical surface (110) and within the chamber, the generating step comprising transforming a native material (135) that is already present within the vacuum chamber and adjacently to the optical surface from a first state into the plasma state (130). The plasma state of the material includes free radicals of the material. The material in the plasma state is generated by enabling the material in the plasma state to move to the entire optical surface to remove debris (107) from the optical surface without removing the optic from the EUV light source.SELECTED DRAWING: Figure 1 【課題】極端紫外線光源のチャンバ内の光学系の表面を洗浄するためのシステム及び方法を提供する。【解決手段】極端紫外線(EUV)光源(100)のチャンバ(125)内の光学系(115)の表面を洗浄する方法が記載される。チャンバは大気圧よりも低い圧力に保持されている。方法は、光表面(110)に隣接したチャンバ内の位置においてプラズマ状態の材料を発生させることを含む。発生させることは、真空チャンバ内で光表面に隣接してすでに存在しているネイティブ材料(135)を第1の状態からプラズマ状態(130)に変換することを含む。材料のプラズマ状態は材料のフリーラジカルを含む。プラズマ状態の材料を発生させるため、プラズマ状態の材料を光表面全体へ移動させて、EUV光源から光学系を取り出すことなく光表面からのデブリ(107)の除去を可能とする。【選択図】図1
Author MATHEW CHEERAN ABRAHAM
BAEK JONGHOON
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Snippet To provide systems and methods for cleaning a surface of an optic located in a chamber of an extreme ultraviolet light source.SOLUTION: Described is a method...
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SourceType Open Access Repository
SubjectTerms APPARATUS SPECIALLY ADAPTED THEREFOR
CINEMATOGRAPHY
ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
ELECTROGRAPHY
HOLOGRAPHY
MATERIALS THEREFOR
ORIGINALS THEREFOR
PHOTOGRAPHY
PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES
PHYSICS
X-RAY TECHNIQUE
Title CLEANING SURFACE OF OPTIC LOCATED IN CHAMBER OF EXTREME ULTRAVIOLET LIGHT SOURCE
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