METHOD FOR FORMING SINGLE CRYSTAL DIAMOND FILM

• Main Authors: SUNAKAWA TAKESHI, QU WEI-FENG, IGAWA SHIZUO
• Format: Patent
• Language: English; Japanese
• Published: 14.06.2023
• Subjects: AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR; BASIC ELECTRIC ELEMENTS; CHEMICAL SURFACE TREATMENT; CHEMISTRY; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING MATERIAL WITH METALLIC MATERIAL; COATING METALLIC MATERIAL; CRYSTAL GROWTH; DIFFUSION TREATMENT OF METALLIC MATERIAL; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL; METALLURGY; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE; REFINING BY ZONE-MELTING OF MATERIAL; SEMICONDUCTOR DEVICES; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE; SINGLE-CRYSTAL-GROWTH; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL

To provide a method for forming a large area single crystal diamond film having high-density diamond cores, and excellent in crystal orientation without having a grain boundary in the film.SOLUTION: A method for forming a single crystal diamond film on a single crystal silicon substrate comprises: a first step of preparing the single crystal silicon substrate having a plane direction of (100) or (111); a second step of subjecting the prepared single crystal silicon substrate to RTA treatment in a carbon containing atmosphere to form a 3C-SiC single crystal film on the surface; a third step of transforming the 3C-SiC single crystal film into diamond cores by a microwave plasma CVD method applying bias voltage in the carbon containing atmosphere to form the diamond cores on the single crystal silicon substrate; and a fourth step of growing the single crystal diamond film on the single crystal silicon substrate by the microwave plasma CVD method in the carbon containing atmosphere.SELECTED DRAWING: Figure 1 【課題】高密度ダイヤモンド核が形成され、結晶配向性が優れており、膜中に粒界が存在しない、大面積の単結晶ダイヤモンド膜の形成方法を提供する。【解決手段】単結晶シリコン基板上に単結晶ダイヤモンド膜を形成する方法であって、面方位が（１００）または（１１１）の単結晶シリコン基板を準備する第一工程と、準備した単結晶シリコン基板に炭素含有雰囲気でＲＴＡ処理を行い、表面に３Ｃ－ＳｉＣ単結晶膜を形成する第二工程と、炭素含有雰囲気でバイアス電圧を印加したマイクロ波プラズマＣＶＤ法により３Ｃ－ＳｉＣ単結晶膜からダイヤモンド核に変換して単結晶シリコン基板上にダイヤモンド核を形成する第三工程と、炭素含有雰囲気でマイクロ波プラズマＣＶＤ法により単結晶シリコン基板上に単結晶ダイヤモンド膜を成長させる第四工程と、を含む単結晶ダイヤモンド膜の形成方法。【選択図】図１