CERAMIC SHOWERHEADS WITH CONDUCTIVE ELECTRODES

• Main Authors: LAKSHESWAR KALITA, LOKKEE LOH, TAN TIEN FAK, SARAVJEET SINGH, PARK SOO-NAM, DMITRY LUBOMIRSKY, KIM TAE WON
• Format: Patent
• Language: English; Japanese
• Published: 06.06.2023
• Subjects: BASIC ELECTRIC ELEMENTS; CHEMICAL SURFACE TREATMENT; CHEMISTRY; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING MATERIAL WITH METALLIC MATERIAL; COATING METALLIC MATERIAL; DIFFUSION TREATMENT OF METALLIC MATERIAL; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL; METALLURGY; PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OFNEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMICBEAMS; SEMICONDUCTOR DEVICES; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION

To provide showerheads and semiconductor processing chambers that can be used to produce high-quality devices and structures.SOLUTION: A semiconductor processing chamber showerheads includes a dielectric plate 505 characterized by a first surface 507 and a second surface 509 opposite the first surface. The dielectric plate defines a plurality of apertures 515 through the dielectric plate, defines a first annular channel 525 located in the first surface of the dielectric plate and extending about the plurality of apertures, and further defines a second annular channel 530 located in the first surface of the dielectric plate and formed radially outward from the first annular channel. The showerheads also include a conductive material 510 embedded within the dielectric plate and extending about the plurality of apertures without being exposed by the apertures. The conductive material is exposed in at least one location within the second annular channel.SELECTED DRAWING: Figure 5B 【課題】高品質の装置及び構造を製造するために使用可能なシャワーヘッド及び半導体処理チャンバを提供する。【解決手段】半導体処理チャンバのシャワーヘッドは、第１の面５０７と、第１の面の反対側の第２の面５０９とによって特徴付けられる誘電体プレート５０５を含む。誘電体プレートは、誘電体プレートを通る複数の開孔５１５を画定し、誘電体プレートの第１の面に、複数の開孔の周りに延在する第１の環状チャネル５２５を画定し、さらに、誘電体プレートの第１の面に、第１の環状チャネルから半径方向外側に形成される第２の環状チャネル５３０を画定する。シャワーヘッドはまた、誘電体プレート内に埋め込まれ、開孔によって露出されずに複数の開孔の周りに延在する導電性材料５１０を含む。導電性材料は、第２の環状チャネル内の少なくとも１つの位置で露出される。【選択図】図５Ｂ