EXHAUST PIPING DEVICE
PURPOSE: To provide an exhaust piping device capable of making plasma generation close to a more uniform state and also removing products deposited inside exhaust piping nearby a vacuum pump.CONSTITUTION: An exhaust piping device 100 is used as a part of exhaust piping arranged between a process cha...
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Language | English Japanese |
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06.06.2023
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Abstract | PURPOSE: To provide an exhaust piping device capable of making plasma generation close to a more uniform state and also removing products deposited inside exhaust piping nearby a vacuum pump.CONSTITUTION: An exhaust piping device 100 is used as a part of exhaust piping arranged between a process chamber and a vacuum pump exhausting the process chamber. The exhaust piping device 100 comprises a dielectric pipe (inner pipe 190), a high frequency electrode 104, and a plasma generation circuit 106. The high frequency electrode 104 has a metal thin plate 50 arranged on an outer peripheral side of the dielectric pipe, a cushioning member 52 arranged on an outer peripheral side of the metal thin plate, and an electrically conductive hollow structure 54 arranged on an outer peripheral side of the cushioning member, and is applied with a high frequency voltage. The plasma generation circuit 106 generates plasma inside the dielectric pipe.SELECTED DRAWING: Figure 2
【目的】プラズマ生成を均一な状態に近づけることが可能であり、真空ポンプ近くの排気配管内部に堆積する生成物を除去することが可能な排気配管装置を提供する。【構成】実施形態の排気配管装置100は、プロセスチャンバと前記プロセスチャンバ内を排気する真空ポンプとの間に配置される排気配管の一部として用いられる排気配管装置100であって、誘電体管(内管190)と、高周波電極104と、プラズマ生成回路106と、を備える。高周波電極104は、前記誘電体管の外周側に配置された金属薄板50と前記金属薄板の外周側に配置された緩衝部材52と前記緩衝部材の外周側に配置された導電性の中空構造体54とを有し、高周波電圧が印加される。プラズマ生成回路106は、前記誘電体管の内側にプラズマを生成させる。【選択図】図2 |
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AbstractList | PURPOSE: To provide an exhaust piping device capable of making plasma generation close to a more uniform state and also removing products deposited inside exhaust piping nearby a vacuum pump.CONSTITUTION: An exhaust piping device 100 is used as a part of exhaust piping arranged between a process chamber and a vacuum pump exhausting the process chamber. The exhaust piping device 100 comprises a dielectric pipe (inner pipe 190), a high frequency electrode 104, and a plasma generation circuit 106. The high frequency electrode 104 has a metal thin plate 50 arranged on an outer peripheral side of the dielectric pipe, a cushioning member 52 arranged on an outer peripheral side of the metal thin plate, and an electrically conductive hollow structure 54 arranged on an outer peripheral side of the cushioning member, and is applied with a high frequency voltage. The plasma generation circuit 106 generates plasma inside the dielectric pipe.SELECTED DRAWING: Figure 2
【目的】プラズマ生成を均一な状態に近づけることが可能であり、真空ポンプ近くの排気配管内部に堆積する生成物を除去することが可能な排気配管装置を提供する。【構成】実施形態の排気配管装置100は、プロセスチャンバと前記プロセスチャンバ内を排気する真空ポンプとの間に配置される排気配管の一部として用いられる排気配管装置100であって、誘電体管(内管190)と、高周波電極104と、プラズマ生成回路106と、を備える。高周波電極104は、前記誘電体管の外周側に配置された金属薄板50と前記金属薄板の外周側に配置された緩衝部材52と前記緩衝部材の外周側に配置された導電性の中空構造体54とを有し、高周波電圧が印加される。プラズマ生成回路106は、前記誘電体管の内側にプラズマを生成させる。【選択図】図2 |
Author | OISHI AKIHIRO MATSUBA HIROSHI FUKUMIZU HIROYUKI |
Author_xml | – fullname: MATSUBA HIROSHI – fullname: OISHI AKIHIRO – fullname: FUKUMIZU HIROYUKI |
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DocumentTitleAlternate | 排気配管装置 |
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Snippet | PURPOSE: To provide an exhaust piping device capable of making plasma generation close to a more uniform state and also removing products deposited inside... |
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SubjectTerms | BASIC ELECTRIC ELEMENTS CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR ELECTRICITY INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY PLASMA TECHNIQUE PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OFNEUTRONS PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMICBEAMS SEMICONDUCTOR DEVICES SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION |
Title | EXHAUST PIPING DEVICE |
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