SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME

To provide a semiconductor device with high reliability and reduced switching loss.SOLUTION: A semiconductor device has an insulating circuit board 1, a power semiconductor element mounted on the insulating circuit board 1, a flat first terminal 81 electrically connected to the power semiconductor e...

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Main Authors KATO RYOICHI, TANIGUCHI KATSUMI, IKEDA YOSHINARI, MURATA YUMA, NAKAGOME AKITO
Format Patent
LanguageEnglish
Japanese
Published 02.05.2023
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Abstract To provide a semiconductor device with high reliability and reduced switching loss.SOLUTION: A semiconductor device has an insulating circuit board 1, a power semiconductor element mounted on the insulating circuit board 1, a flat first terminal 81 electrically connected to the power semiconductor element and having a first main surface, a second terminal 82 electrically connected to the power semiconductor element and having a second main surface opposite the first main surface of the first terminal 81, an insulating sheet 83 disposed between the first and second main surfaces, and conductive films 84, 85 disposed at least on one of the first and second main surface sides of the insulating sheet 83.SELECTED DRAWING: Figure 2 【課題】信頼性が高く、スイッチング損失を低減することができる半導体装置を提供する。【解決手段】絶縁回路基板1と、絶縁回路基板1上に搭載されたパワー半導体素子と、パワー半導体素子に電気的に接続され、第1主面を有する平板状の第1端子81と、パワー半導体素子に電気的に接続され、第1端子81の第1主面と対向する第2主面を有する第2端子82と、第1主面と前記第2主面の間に配置された絶縁シート83と、絶縁シート83の第1主面側及び第2主面側の少なくとも一方に配置された導電膜84,85とを備える。【選択図】図2
AbstractList To provide a semiconductor device with high reliability and reduced switching loss.SOLUTION: A semiconductor device has an insulating circuit board 1, a power semiconductor element mounted on the insulating circuit board 1, a flat first terminal 81 electrically connected to the power semiconductor element and having a first main surface, a second terminal 82 electrically connected to the power semiconductor element and having a second main surface opposite the first main surface of the first terminal 81, an insulating sheet 83 disposed between the first and second main surfaces, and conductive films 84, 85 disposed at least on one of the first and second main surface sides of the insulating sheet 83.SELECTED DRAWING: Figure 2 【課題】信頼性が高く、スイッチング損失を低減することができる半導体装置を提供する。【解決手段】絶縁回路基板1と、絶縁回路基板1上に搭載されたパワー半導体素子と、パワー半導体素子に電気的に接続され、第1主面を有する平板状の第1端子81と、パワー半導体素子に電気的に接続され、第1端子81の第1主面と対向する第2主面を有する第2端子82と、第1主面と前記第2主面の間に配置された絶縁シート83と、絶縁シート83の第1主面側及び第2主面側の少なくとも一方に配置された導電膜84,85とを備える。【選択図】図2
Author IKEDA YOSHINARI
KATO RYOICHI
TANIGUCHI KATSUMI
MURATA YUMA
NAKAGOME AKITO
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– fullname: NAKAGOME AKITO
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Snippet To provide a semiconductor device with high reliability and reduced switching loss.SOLUTION: A semiconductor device has an insulating circuit board 1, a power...
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SourceType Open Access Repository
SubjectTerms BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
Title SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME
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