SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME
To provide a semiconductor device with high reliability and reduced switching loss.SOLUTION: A semiconductor device has an insulating circuit board 1, a power semiconductor element mounted on the insulating circuit board 1, a flat first terminal 81 electrically connected to the power semiconductor e...
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Format | Patent |
Language | English Japanese |
Published |
02.05.2023
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Abstract | To provide a semiconductor device with high reliability and reduced switching loss.SOLUTION: A semiconductor device has an insulating circuit board 1, a power semiconductor element mounted on the insulating circuit board 1, a flat first terminal 81 electrically connected to the power semiconductor element and having a first main surface, a second terminal 82 electrically connected to the power semiconductor element and having a second main surface opposite the first main surface of the first terminal 81, an insulating sheet 83 disposed between the first and second main surfaces, and conductive films 84, 85 disposed at least on one of the first and second main surface sides of the insulating sheet 83.SELECTED DRAWING: Figure 2
【課題】信頼性が高く、スイッチング損失を低減することができる半導体装置を提供する。【解決手段】絶縁回路基板1と、絶縁回路基板1上に搭載されたパワー半導体素子と、パワー半導体素子に電気的に接続され、第1主面を有する平板状の第1端子81と、パワー半導体素子に電気的に接続され、第1端子81の第1主面と対向する第2主面を有する第2端子82と、第1主面と前記第2主面の間に配置された絶縁シート83と、絶縁シート83の第1主面側及び第2主面側の少なくとも一方に配置された導電膜84,85とを備える。【選択図】図2 |
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AbstractList | To provide a semiconductor device with high reliability and reduced switching loss.SOLUTION: A semiconductor device has an insulating circuit board 1, a power semiconductor element mounted on the insulating circuit board 1, a flat first terminal 81 electrically connected to the power semiconductor element and having a first main surface, a second terminal 82 electrically connected to the power semiconductor element and having a second main surface opposite the first main surface of the first terminal 81, an insulating sheet 83 disposed between the first and second main surfaces, and conductive films 84, 85 disposed at least on one of the first and second main surface sides of the insulating sheet 83.SELECTED DRAWING: Figure 2
【課題】信頼性が高く、スイッチング損失を低減することができる半導体装置を提供する。【解決手段】絶縁回路基板1と、絶縁回路基板1上に搭載されたパワー半導体素子と、パワー半導体素子に電気的に接続され、第1主面を有する平板状の第1端子81と、パワー半導体素子に電気的に接続され、第1端子81の第1主面と対向する第2主面を有する第2端子82と、第1主面と前記第2主面の間に配置された絶縁シート83と、絶縁シート83の第1主面側及び第2主面側の少なくとも一方に配置された導電膜84,85とを備える。【選択図】図2 |
Author | IKEDA YOSHINARI KATO RYOICHI TANIGUCHI KATSUMI MURATA YUMA NAKAGOME AKITO |
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DocumentTitleAlternate | 半導体装置及びその製造方法 |
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Snippet | To provide a semiconductor device with high reliability and reduced switching loss.SOLUTION: A semiconductor device has an insulating circuit board 1, a power... |
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SubjectTerms | BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES |
Title | SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME |
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