ION IMPLANTER AND PARTICLE DETECTION METHOD
To improve the detection accuracy of particles transported with an ion beam.SOLUTION: An ion implanter 10 includes a beamline device 14 that transports an ion beam, an injection processing chamber 16 in which the injection processing for irradiating a wafer W with an ion beam is performed, a lightin...
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Format | Patent |
Language | English Japanese |
Published |
06.04.2022
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Abstract | To improve the detection accuracy of particles transported with an ion beam.SOLUTION: An ion implanter 10 includes a beamline device 14 that transports an ion beam, an injection processing chamber 16 in which the injection processing for irradiating a wafer W with an ion beam is performed, a lighting device 64 that emits illumination light L in a direction intersecting the transport direction of the ion beam in at least one of a beamline device 14 and an injection processing chamber 16, an imaging device 66 that captures an image of a space through which the illumination light L passes and generates an image, and a control device 60 that detects particles that scatter the illumination light L on the basis of the captured image.SELECTED DRAWING: Figure 1
【課題】イオンビームとともに輸送されるパーティクルの検出精度を高める。【解決手段】イオン注入装置10は、イオンビームを輸送するビームライン装置14と、イオンビームをウェハWに照射する注入処理がなされる注入処理室16と、ビームライン装置14内および注入処理室16内の少なくとも一方においてイオンビームの輸送方向と交差する方向に照明光Lを照射する照明装置64と、照明光Lが通過する空間を撮像して撮像画像を生成する撮像装置66と、撮像画像に基づいて照明光Lを散乱させるパーティクルを検出する制御装置60と、を備える。【選択図】図1 |
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AbstractList | To improve the detection accuracy of particles transported with an ion beam.SOLUTION: An ion implanter 10 includes a beamline device 14 that transports an ion beam, an injection processing chamber 16 in which the injection processing for irradiating a wafer W with an ion beam is performed, a lighting device 64 that emits illumination light L in a direction intersecting the transport direction of the ion beam in at least one of a beamline device 14 and an injection processing chamber 16, an imaging device 66 that captures an image of a space through which the illumination light L passes and generates an image, and a control device 60 that detects particles that scatter the illumination light L on the basis of the captured image.SELECTED DRAWING: Figure 1
【課題】イオンビームとともに輸送されるパーティクルの検出精度を高める。【解決手段】イオン注入装置10は、イオンビームを輸送するビームライン装置14と、イオンビームをウェハWに照射する注入処理がなされる注入処理室16と、ビームライン装置14内および注入処理室16内の少なくとも一方においてイオンビームの輸送方向と交差する方向に照明光Lを照射する照明装置64と、照明光Lが通過する空間を撮像して撮像画像を生成する撮像装置66と、撮像画像に基づいて照明光Lを散乱させるパーティクルを検出する制御装置60と、を備える。【選択図】図1 |
Author | MORITA TAKEO HIROSE SAYUMI NINOMIYA AKI YAKIDA TAKANORI |
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DocumentTitleAlternate | イオン注入装置およびパーティクル検出方法 |
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Snippet | To improve the detection accuracy of particles transported with an ion beam.SOLUTION: An ion implanter 10 includes a beamline device 14 that transports an ion... |
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SubjectTerms | BASIC ELECTRIC ELEMENTS ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES |
Title | ION IMPLANTER AND PARTICLE DETECTION METHOD |
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