SEMICONDUCTOR STORAGE DEVICE

• Main Authors: SAKUMA YU, SAITO MASUMI, SAKUMA KIWAMU
• Format: Patent
• Language: English; Japanese
• Published: 04.04.2022
• Subjects: ELECTRICITY; INFORMATION STORAGE; PHYSICS; STATIC STORES

To provide a semiconductor storage device that can be suitably controlled.SOLUTION: A semiconductor storage device includes a plurality of gate electrodes, a semiconductor layer facing the plurality of gate electrodes, a gate insulating film provided between the plurality of gate electrodes and the semiconductor layer, and a plurality of first wiring connected to the plurality of gate electrodes. In a write sequence executed before the number of executions of the write sequence or the erase sequence reaches a predetermined number of times, a program voltage having a first magnitude is supplied to one of the plurality of first wirings during a first supplying time. In a write sequence executed after the number of executions of the write sequence or the erase sequence reaches a predetermined number of times, a program voltage having a second magnitude is supplied to one of the plurality of first wirings during a second supplying time. The second magnitude is larger than the first magnitude, or the second supplying time is longer than the first supplying time.SELECTED DRAWING: Figure 21 【課題】好適に制御可能な半導体記憶装置を提供する。【解決手段】半導体記憶装置は、複数のゲート電極と、複数のゲート電極に対向する半導体層と、複数のゲート電極と半導体層との間に設けられたゲート絶縁膜と、複数のゲート電極に接続された複数の第１配線と、を備える。書込シーケンス又は消去シーケンスの実行回数が所定回数に達する前に実行される書込シーケンスにおいて、複数の第１配線のうちの一つに、第１の大きさのプログラム電圧が、第１の供給時間の間供給される。書込シーケンス又は消去シーケンスの実行回数が所定回数に達した後に実行される書込シーケンスにおいて、複数の第１配線のうちの一つに、第２の大きさのプログラム電圧が、第２の供給時間の間供給される。第２の大きさが第１の大きさよりも大きく、又は、第２の供給時間が第１の供給時間よりも長い。【選択図】図２１