SEMICONDUCTOR STORAGE DEVICE AND METHOD FOR MANUFACTURING SEMICONDUCTOR STORAGE DEVICE

• Main Authors: HAMADA TATSUFUMI, KUKI TOMOHIRO, MANNO YOSUKE, TSUDA MUNEYUKI, SAOTOME SHINICHI
• Format: Patent
• Language: English; Japanese
• Published: 10.03.2022
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

To provide a semiconductor storage device capable of improving electric characteristics, and a method for manufacturing the semiconductor storage device.SOLUTION: A semiconductor storage device of an embodiment comprises a substrate, a charge holding unit, and a channel layer. At least a part of the charge holding unit is bent on a cross section along a surface of the substrate. In the cross section, the channel layer is located inside the charge holding unit, and at least a part of the channel layer is bent. The charge holding unit differs in curvature according to the position in the cross section. The channel layer differs in a film thickness according to the curvature of the charge holding unit in the cross section.SELECTED DRAWING: Figure 2 【課題】電気的特性の改善を図ることができる半導体記憶装置、および半導体記憶装置の製造方法を提供することである。【解決手段】実施形態の半導体記憶装置は、基板と、電荷保持部と、チャネル層とを持つ。前記電荷保持部は、前記基板の表面に沿う断面において少なくとも一部が曲がっている。前記チャネル層は、前記断面において、前記電荷保持部の内側に位置し、少なくとも一部が曲がっている。前記電荷保持部は、前記断面において位置に応じて曲率が異なる。前記チャネル層は、前記断面において前記電荷保持部の曲率に応じて膜厚が異なる。【選択図】図２