METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE

• Main Authors: KUROSAKI JUNICHIRO, NISHII JUNYA, IZUMI TAKATOMI
• Format: Patent
• Language: English; Japanese
• Published: 02.12.2021
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

To provide a method for manufacturing a semiconductor device capable of suppressing diffusion of Ga from a group III nitride semiconductor into an insulation film.SOLUTION: A method for manufacturing a semiconductor device includes: a step of forming a first SiO2 film F11 on a group III nitride semi...