METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE

• Main Authors: KUROSAKI JUNICHIRO, NISHII JUNYA, IZUMI TAKATOMI
• Format: Patent
• Language: English; Japanese
• Published: 02.12.2021
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

To provide a method for manufacturing a semiconductor device capable of suppressing diffusion of Ga from a group III nitride semiconductor into an insulation film.SOLUTION: A method for manufacturing a semiconductor device includes: a step of forming a first SiO2 film F11 on a group III nitride semiconductor layer; a first heat treatment step of thermally treating the first SiO2 film F11; a step of forming a second SiO2 film F12 on the first SiO2 film F11; and a second heat treatment step of thermally treating the second SiO2 film F12. Heat treatment temperature of the first heat treatment step is higher than that of the second heat treatment step.SELECTED DRAWING: Figure 3 【課題】 III 族窒化物半導体から絶縁膜へのＧａの拡散を抑制することができる半導体装置の製造方法を提供することである。【解決手段】 この製造方法は、III 族窒化物半導体層の上に第１ＳｉＯ2膜Ｆ１１を成膜する工程と、第１ＳｉＯ2膜Ｆ１１を熱処理する第１熱処理工程と、第１ＳｉＯ2膜Ｆ１１の上に第２ＳｉＯ2膜Ｆ１２を成膜する工程と、第２ＳｉＯ2膜Ｆ１２を熱処理する第２熱処理工程と、を有する。第１熱処理工程の熱処理温度は、第２熱処理工程の熱処理温度よりも高い。【選択図】図３