SYSTEM, METHOD AND APPARATUS FOR TARGET MATERIAL DEBRIS CLEANING OF EUV VESSEL AND EUV COLLECTOR

• Main Authors: DAVID ROBERT EVANS, BAEK JONGHOON, JACK MICHAEL GAZZA, MATHEW CHEERAN ABRAHAM
• Format: Patent
• Language: English; Japanese
• Published: 02.12.2021
• Subjects: APPARATUS SPECIALLY ADAPTED THEREFOR; BASIC ELECTRIC ELEMENTS; CINEMATOGRAPHY; ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS; ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; ELECTROGRAPHY; HOLOGRAPHY; MATERIALS THEREFOR; ORIGINALS THEREFOR; PHOTOGRAPHY; PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES; PHYSICS; X-RAY TECHNIQUE

To provide a system and a method for generating hydrogen radicals H* in situ in an EUV vessel, proximate to target material debris deposits.SOLUTION: A system and a method for removing target material debris deposits simultaneously upon generating EUV light include generating hydrogen radicals in situ in the EUV vessel, proximate to the target material debris deposits and volatilizing the target material debris deposits and purging the volatilized target material debris deposits from the EUV vessel without the need of oxygen-containing species in the EUV vessel.SELECTED DRAWING: Figure 2 【課題】ターゲット材料デブリ堆積に直近のＥＵＶ容器内でインシチュで水素ラジカルＨ＊を発生するためのシステム及び方法を提供する。【解決手段】ＥＵＶ光を発生するのと同時にターゲット材料デブリ堆積を除去するシステム及びＥＵＶ光を発生するのと同時にターゲット材料デブリ堆積を除去する方法は、ターゲット材料デブリ堆積に直近のＥＵＶ容器においてインシチュで水素ラジカルを発生することと、ターゲット材料デブリ堆積を揮発させることと、ＥＵＶ容器内の酸素含有種を必要とすることなくＥＵＶ容器から揮発させたターゲット材料デブリ堆積をパージすることと、を含む。【選択図】図２