IMPROVEMENT OF SOURCE-SIDE PRECHARGE AND BOOST FOR REVERSE-ORDER PROGRAM
To provide a device and a method for preserving NAND string channel bias during source-side pre-charging.SOLUTION: A memory device includes: a non-volatile memory array; and a die controller configured to mitigate a formation of a potential gradient in a NAND string channel of the non-volatile memor...
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13.09.2021
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Abstract | To provide a device and a method for preserving NAND string channel bias during source-side pre-charging.SOLUTION: A memory device includes: a non-volatile memory array; and a die controller configured to mitigate a formation of a potential gradient in a NAND string channel of the non-volatile memory array during program storage operation. A method for preserving a bias activates a plurality of source-side selection gates and activates each of a plurality of source-side dummy word line selection gates. Next, biasing of the NAND string channel is carried out by biasing the source line coupled to the NAND string by the source-side selection gates, and the plurality of source-side selection gates and the plurality of source-side dummy word line selection gates are discharged so that the channel preserves an electrical path to the source line.SELECTED DRAWING: Figure 17
【課題】ソース側プリチャージ中にNANDストリングチャネルのバイアスを保持するための装置及び方法を提供する。【解決手段】メモリデバイスは、不揮発性メモリアレイと、プログラムストレージ動作中に不揮発性メモリアレイのNANDストリングのチャネルでのポテンシャル勾配の形成を緩和するように構成したダイコントローラと、を含む。バイアスを保持するための方法は、複数のソース側選択ゲートを活性化し、複数のソース側ダミーワード線選択ゲートの各々を活性化する。次に、複数のソース側選択ゲートによってNANDストリングに結合されたソース線をバイアスすることによって、NANDストリングチャネルをバイアスし、チャネルがソース線への電気経路を維持するように、複数のソース側選択ゲート及び複数のソース側ダミーワード線選択ゲートをディスチャージする。【選択図】図17 |
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AbstractList | To provide a device and a method for preserving NAND string channel bias during source-side pre-charging.SOLUTION: A memory device includes: a non-volatile memory array; and a die controller configured to mitigate a formation of a potential gradient in a NAND string channel of the non-volatile memory array during program storage operation. A method for preserving a bias activates a plurality of source-side selection gates and activates each of a plurality of source-side dummy word line selection gates. Next, biasing of the NAND string channel is carried out by biasing the source line coupled to the NAND string by the source-side selection gates, and the plurality of source-side selection gates and the plurality of source-side dummy word line selection gates are discharged so that the channel preserves an electrical path to the source line.SELECTED DRAWING: Figure 17
【課題】ソース側プリチャージ中にNANDストリングチャネルのバイアスを保持するための装置及び方法を提供する。【解決手段】メモリデバイスは、不揮発性メモリアレイと、プログラムストレージ動作中に不揮発性メモリアレイのNANDストリングのチャネルでのポテンシャル勾配の形成を緩和するように構成したダイコントローラと、を含む。バイアスを保持するための方法は、複数のソース側選択ゲートを活性化し、複数のソース側ダミーワード線選択ゲートの各々を活性化する。次に、複数のソース側選択ゲートによってNANDストリングに結合されたソース線をバイアスすることによって、NANDストリングチャネルをバイアスし、チャネルがソース線への電気経路を維持するように、複数のソース側選択ゲート及び複数のソース側ダミーワード線選択ゲートをディスチャージする。【選択図】図17 |
Author | SARATH PUTHENTHERMADAM TSENG HUAI-YUAN LIEN YUUNG |
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Snippet | To provide a device and a method for preserving NAND string channel bias during source-side pre-charging.SOLUTION: A memory device includes: a non-volatile... |
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Title | IMPROVEMENT OF SOURCE-SIDE PRECHARGE AND BOOST FOR REVERSE-ORDER PROGRAM |
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