SEMICONDUCTOR FAILURE ANALYZER
To improve the resolution of semiconductor failure analyzer.SOLUTION: A semiconductor failure analyzer includes: a tester 2 that applies a stimulus signal to a semiconductor device 100; a light source 3 that generates irradiation light L1 to be applied to the semiconductor device 100; a solid immers...
Saved in:
Main Authors | , , , |
---|---|
Format | Patent |
Language | English Japanese |
Published |
26.08.2021
|
Subjects | |
Online Access | Get full text |
Cover
Loading…
Summary: | To improve the resolution of semiconductor failure analyzer.SOLUTION: A semiconductor failure analyzer includes: a tester 2 that applies a stimulus signal to a semiconductor device 100; a light source 3 that generates irradiation light L1 to be applied to the semiconductor device 100; a solid immersion lens 4 placed on an optical path of the irradiation light L1; a photodetector 5 that receives reflected light L2 and outputs a detection signal corresponding to the reflected light L2; an optical system 6 being arranged between the solid immersion lens 4 and the light source 3 in which the irradiation light L1 is emitted to the semiconductor device 100 via the solid immersion lens 4 and being arranged between the solid immersion lens 4 and the photodetector 5 in which the reflected light L2 received via the solid immersion lens 4 is emitted to the photodetector 5; and a computer 7 that obtains information about the failure location of the semiconductor device 100 using the detection signal. The light source 3 emits the irradiation light L1 having a center wavelength of 880 nm or more and 980 nm or less. The solid immersion lens 4 is made of GaAs.SELECTED DRAWING: Figure 1
【課題】半導体故障解析装置の分解能を向上させる。【解決手段】半導体故障解析装置は、半導体デバイス100に刺激信号を印加するテスタ2と、半導体デバイス100に照射される照射光L1を生成する光源3と、照射光L1の光路上に配置される固浸レンズ4と、反射光L2を受け、反射光L2に応じる検出信号を出力する光検出部5と、光源3と固浸レンズ4との間に配置されて固浸レンズ4を介して半導体デバイス100に照射光L1を出射すると共に、固浸レンズ4と光検出部5との間に配置されて固浸レンズ4を介して受けた反射光L2を光検出部5に出射する光学系6と、検出信号を利用して半導体デバイス100の故障箇所に関する情報を得るコンピュータ7と、を備える。光源3は、中心波長が880nm以上980nm以下である照射光L1を出射する。固浸レンズ4は、GaAsによって形成されている。【選択図】図1 |
---|---|
Bibliography: | Application Number: JP20200014907 |