SEMICONDUCTOR FAILURE ANALYZER

• Main Authors: ARATA IKUO, ITO YOSHIHIRO, IKESU MASATAKA, ISHIZUKA TOSHIMICHI
• Format: Patent
• Language: English; Japanese
• Published: 26.08.2021
• Subjects: INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIRCHEMICAL OR PHYSICAL PROPERTIES; MEASURING; MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES; PHYSICS; TESTING

To improve the resolution of semiconductor failure analyzer.SOLUTION: A semiconductor failure analyzer includes: a tester 2 that applies a stimulus signal to a semiconductor device 100; a light source 3 that generates irradiation light L1 to be applied to the semiconductor device 100; a solid immersion lens 4 placed on an optical path of the irradiation light L1; a photodetector 5 that receives reflected light L2 and outputs a detection signal corresponding to the reflected light L2; an optical system 6 being arranged between the solid immersion lens 4 and the light source 3 in which the irradiation light L1 is emitted to the semiconductor device 100 via the solid immersion lens 4 and being arranged between the solid immersion lens 4 and the photodetector 5 in which the reflected light L2 received via the solid immersion lens 4 is emitted to the photodetector 5; and a computer 7 that obtains information about the failure location of the semiconductor device 100 using the detection signal. The light source 3 emits the irradiation light L1 having a center wavelength of 880 nm or more and 980 nm or less. The solid immersion lens 4 is made of GaAs.SELECTED DRAWING: Figure 1 【課題】半導体故障解析装置の分解能を向上させる。【解決手段】半導体故障解析装置は、半導体デバイス１００に刺激信号を印加するテスタ２と、半導体デバイス１００に照射される照射光Ｌ１を生成する光源３と、照射光Ｌ１の光路上に配置される固浸レンズ４と、反射光Ｌ２を受け、反射光Ｌ２に応じる検出信号を出力する光検出部５と、光源３と固浸レンズ４との間に配置されて固浸レンズ４を介して半導体デバイス１００に照射光Ｌ１を出射すると共に、固浸レンズ４と光検出部５との間に配置されて固浸レンズ４を介して受けた反射光Ｌ２を光検出部５に出射する光学系６と、検出信号を利用して半導体デバイス１００の故障箇所に関する情報を得るコンピュータ７と、を備える。光源３は、中心波長が８８０ｎｍ以上９８０ｎｍ以下である照射光Ｌ１を出射する。固浸レンズ４は、ＧａＡｓによって形成されている。【選択図】図１