SEMICONDUCTOR DEVICE

• Main Authors: KATO RYOICHI, IKEDA YOSHINARI, MURATA YUMA
• Format: Patent
• Language: English; Japanese
• Published: 26.07.2021
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

To provide a connection mechanism capable of reducing inductance.SOLUTION: A capacitor 30 has a case 31 including a capacitor element, a first connection terminal 32, a second connection terminal 34, and a second insulation sheet 33 formed between the first connection terminal 32 and the second connection terminal 34, in which the first connection terminal 32, the second insulation sheet 33 and the second connection terminal 34 are extended from the case 31 to the outside. A semiconductor module 20 has a terminal lamination section in which a first power terminal 22, a first insulation sheet 23 and a second power terminal 24 are successively overlapped. The first power terminal 22 has a first junction region 221 conductively connected to the first connection terminal 32, the second power terminal 24 has a second junction region 241 conductively connected to the second connection terminal 34 and the first insulation sheet 33 has a terrace portion 28 extended in a direction from the second junction region 241 to the first junction region 221 in plan view.SELECTED DRAWING: Figure 5 【課題】インダクタンスを低減できる接続機構を有する。【解決手段】キャパシタ３０は、キャパシタ素子を含むケース３１、第１接続端子３２、第２接続端子３４、及び、第１接続端子３２と第２接続端子３４との間に設けられた第２絶縁シート３３を有し、第１接続端子３２、第２絶縁シート３３及び第２接続端子３４がケース３１から外部へ延出している。半導体モジュール２０は、第１パワー端子２２、第１絶縁シート２３及び第２パワー端子２４が順に重なっている端子積層部を有する。当該第１パワー端子２２は、第１接続端子３２と導電接続された第１接合領域２２１を有し、当該第２パワー端子２４は、第２接続端子３４と導電接続された第２接合領域２４１を有し、当該第１絶縁シート３３は、平面視において第２接合領域２４１から第１接合領域２２１に向かう方向へ延伸するテラス部２８を有する。【選択図】図５