SWITCHING ELEMENT AND MANUFACTURING METHOD OF SWITCHING ELEMENT

• Main Author: KITADA HIDEKI
• Format: Patent
• Language: English; Japanese
• Published: 27.05.2021
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

To provide a switching element capable of suppressing the deterioration of rectification characteristics.SOLUTION: A switching element includes: a first wiring that is formed extending in a first direction on a first insulator film; a second wiring that is formed extending in a second direction crossing the first direction on a second insulator film; an ion conductive layer that is located between the first wiring and the second wiring in an area where the first wiring and the second wiring cross and is directly connected to the second wiring so as to conduct metal ion supplied from the second wiring; and a metal oxide film located between the first wiring and the ion conductive layer.SELECTED DRAWING: Figure 3 【課題】整流特性の劣化を抑制すること。【解決手段】第１絶縁膜に設けられ、第１方向に延びた第１配線と、第２絶縁膜に設けられ、前記第１方向に交差する第２方向に延びた第２配線と、前記第１配線と前記第２配線が交差する交差領域で前記第１配線と前記第２配線との間に挟まれ且つ前記第２配線に直接接し、前記第２配線から供給される金属イオンを伝導可能なイオン伝導層と、前記第１配線と前記イオン伝導層との間に挟まれた金属酸化膜と、を備えるスイッチ素子。【選択図】図３